http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





EIC
EIC

D10XB60H Datasheet Preview

D10XB60H Datasheet

SILICON BRIDGE RECTIFIER

No Preview Available !

D10XB60H pdf
TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
D10XB60H
SILICON BRIDGE RECTIFIER
RBV4
PRV : 600 Volts
Io : 10 Amperes
FEATURES :
* Glass passivated junction chip
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
* Very good heat dissipation
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 4.28 grams
0.150 (3.8)
0.134 (3.4)
C3
0.996 (25.3)
0.189 (4.8)
0.972 (24.7)
0.173 (4.4)
+~~
0.303 (7.7)
0.287 (7.3)
0.075 (1.9)
0.060 (1.5)
0.043 (1.1)
0.035 (0.9)
0.114 (2.9)
0.098 (2.5)
0.032 (0.8)
0.043 (1.1)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
RATING
Maximum Peak Reverse Voltage
Maximum Average Forward Current With heatsink, Tc = 112 °C
(50Hz Sine wave, R-load )
Without heatsink, Ta = 25 °C
Maximum Peak Forward Surge Current, Tj = 25 °C
(50Hz sine wave, Non-repetitive 1 cycle peak value)
Current Squared Time at 1ms t < 10 ms, TJ = 25 °C
Maximum Forward Voltage per Diode at IF = 5.0 A
( Pulse measurement, Rating of per diode)
Maximum DC Reverse Current, VR=VRM
( Pulse measurement, Rating of per diode)
Maximum Thermal Resistance, Junction to case, With heatsink
Maximum Thermal Resistance, Junction to Ambient, Without heatsink
Maximum Thermal Resistance, Junction to Lead, Without heatsink
Operating Junction Temperature
Storage Temperature Range
SYMBOL
VRM
IO
IFSM
I2t
VF
IR
RӨJC
RӨJA
RӨJL
TJ
TSTG
VALUE
600
10
2.9
170
110
1.05
10
1.9
26
6
150
- 40 to + 150
UNIT
V
A
A
A2S
V
μA
°C/W
°C/W
°C/W
°C
°C
Page 1 of 2
Rev. 00 : February 5, 2009



EIC
EIC

D10XB60H Datasheet Preview

D10XB60H Datasheet

SILICON BRIDGE RECTIFIER

No Preview Available !

D10XB60H pdf
TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
RATING AND CHARACTERISTIC CURVES ( D10XB60H )
FIG.1 - DERATING CURVE
10
8
6
4
2
Sine wave, R-load with heatsink
0
80
90
100 110 120 130 140
CASE TEMPERATURE, ( °C)
150
FIG.2 - MAXIMUM NON-REPETITIVE
FORWARD SURGE CURRENT
200
150
100
50
0
1 10 100
NUMBER OF CYCLES (CYCLES)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
100
10
Tc = 150 °C
1.0
Tc = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2
FORWARD VOLTAGE, (V)
1.4
FIG.4 - POWER DISSIPATION
30
25
20
15
10
Sine wave
5 TJ = 150 °C
0
0 2 4 6 8 10 12 14
AVERAGE RECTIFIED CURRENT, (A)
Page 2 of 2
Rev. 00 : February 5, 2009


Part Number D10XB60H
Description SILICON BRIDGE RECTIFIER
Maker EIC
Total Page 2 Pages
PDF Download
D10XB60H pdf
Download PDF File


Buy Electronic Components




Related Datasheet

1 D10XB60 General Purpose Rectifiers(600V 10A) Shindengen Electric Mfg.Co.Ltd
Shindengen Electric Mfg.Co.Ltd
D10XB60 pdf
2 D10XB60H GENERAL PURPOSE REETIFIERS SHINDENGEN
SHINDENGEN
D10XB60H pdf
3 D10XB60H SILICON BRIDGE RECTIFIER EIC
EIC
D10XB60H pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components