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MBR735 Datasheet Preview

MBR735 Datasheet

SCHOTTKY BARRIER RECTIFIER DIODES

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MBR735 pdf
MBR735 ~ MBR760
PRV : 35~60 Volts
Io : 7.5 Amperes
FEATURES :
* Plastic package has Underwriters Laboratory
Flammability Classifications 94V-0
* Metal silicon junction, majority carrier conduction
* Low power loss, high efficiency
* Guardring for overvoltage protection
* For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
* High temperature soldering : 250°C/10 seconds,
0.25" (6.35mm) from case
* Pb / RoHS Free
MECHANICAL DATA :
* Case : JEDEC TO-220AC molded plastic body
* Terminals: Plated leads, solderable per
MIL-STD-750 Method 2026
* Polarity: As marked
* Mounting Position: Any
* Weight : 2.24 grams (Approximately)
Certificate TH97/10561QM
Certificate TW00/17276EM
SCHOTTKY BARRIER
RECTIFIER DIODES
TO-220AC
0.154(3.91)DIA.
0.148(3.74)
0.415(10.54)MAX.
0.055(1.39)
0.113(2.87)
0.045(1.14)
0.103(2.62)
0.145(3.68)
0.135(3.43)
0.635(16.13)
0.625(15.87)
12
0.350(8.89)
0.330(8.39)
0.160(4.06)
PIN 1
0.140(3.56)
PIN 2
CASE
0.205(520)
0.195(4.95)
0.037(0.94)
0.027(0.68)
0.185(4.70)
0.175(4.44)
0.603(15.32)
0.573(14.55)
0.560(14.22)
0.530(13.46)
0.022(0.56)
0.014(0.36)
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ( Tc = 25 °C unless otherwise noted)
RATINGS
Maximum Reptitive Peak Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current (See Fig. 1)
Peak Forward Surg Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum Instantaneous Forward Voltage (Note 1)
at IF = 7.5 A, TC = 25 °C
at IF = 7.5 A, TC = 125 °C
Maximum Reverse Current at Rate
Peak Reverse Voltage
T C = 25 °C
T C = 125 °C
Typical Thermal Resistance
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL MBR735 MBR745 MBR750 MBR760 UNIT
VRRM
35
45
50
60
V
VRWM
35
45
50
60
V
VDC 35 45 50 60 V
IF(AV) 7.5 A
IFSM 150 A
VF
IR
IR(H)
RθJC
TJ
TSTG
- 0.75
0.57 0.65
0.1 0.5
15 50
3.0
-65 to + 150
-65 to + 175
V
mA
°C/W
°C
°C
Note :
(1) Pulse test : 300 µs pluse width, 1% duty cycle
Page 1 of 2
Rev. 01 : February 22, 2006



EIC
EIC

MBR735 Datasheet Preview

MBR735 Datasheet

SCHOTTKY BARRIER RECTIFIER DIODES

No Preview Available !

MBR735 pdf
Certificate TH97/10561QM
Certificate TW00/17276EM
RATING AND CHARACTERISTIC CURVES ( MBR735 ~ MBR760 )
FIG.1 - FORWARD CURRENT DERATING CURVE
7.5
6.0
4.5 MBR735 & MBR745
MBR750 & MBR760
3.0
1.5
Resistive or Inductive Load
0
0 25 50 75 100 125 150
CASE TEMPERATURE, (°C)
175
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
150
120
90
60
TJ =TJmax
8.3 ms single half sine-wave
30 (JEDEC Method)
0
12
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
100
Pluse Width = 300 µs
1% Duty Cycle
10
TJ = 25 °C
1.0
MBR735 & MBR745
0.1 MBR750 & MBR760
0.01
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
INSTANTANEOUS FORWARD
VOLTAGE, (V)
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
10
TJ = 125 °C
1.0
MBR735 & MBR745
0.1 MBR750 & MBR760
0.01
TJ = 25 °C
0.001
0
20 40 60 80
PERCENT OF RATED PEAK
REVERSE VOLTAGE, (%)
100
Page 1 of 2
Rev. 01 : February 22, 2006


Part Number MBR735
Description SCHOTTKY BARRIER RECTIFIER DIODES
Maker EIC
Total Page 2 Pages
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