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SD103CWS Datasheet Preview

SD103CWS Datasheet

SCHOTTKY BARRIER DIODES

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SD103CWS pdf
Certificate TH97/10561QM
Certificate TW00/17276EM
SD103AWS - SD103CWS
SCHOTTKY BARRIER DIODES
FEATURES :
* For general purpose applications
* The SD103 series is a metal-on-silicon
Schottky barrier device which is
protected by a PN junction guard ring.
* The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications.
* These diodes are also available in the MiniMELF case
with type designations LL103A thru LL103C.
* Pb / RoHS Free
MECHANICAL DATA :
* Case : SOD-323 plastic Case
* Weight : approx. 0.004 g
* SD103AWS Marking Code : S4
* SD103BWS Marking Code : S5
* SD103CWS Marking Code : S6
SOD-323
1.80
1.60
2.80
2.30
Dimensions in millimeters
Maximum Ratings and Thermal Characteristics (TC = 25 °C unless otherwise noted)
Parameter
Repetitive Peak Reverse Voltage
Maximum Single Cycle Surge 10 µs Square Wave
Power Dissipation (Infinite Heat Sink)
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage temperature range
SD103AWS
SD103BWS
SD103CWS
Symbol
VRRM
IFSM
Ptot
RθJA
TJ
TSTG
Value
40
30
20
2
150(1)
650(1)
125(1)
-55 to + 150
Unit
V
A
mW
°C/W
°C
°C
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Reverse Current
Forward Voltage Drop
Junction Capacitance
Reverse Recovery Time
SD103AWS
SD103BWS
SD103CWS
Symbol
IR
VF
Ctot
Trr
Note:
(1) Valid provided that electrodes are kept at ambient temperature.
Test Condition
VR = 30 V
VR = 20 V
VR = 10 V
IF = 20mA
IF = 200mA
VR = 0 V, f = 1MHz
IF = IR = 50mA to 200mA
recover to 0.1IR
Min
-
-
-
-
-
-
-
Typ Max Unit
-5
- 5 μA
-5
- 0.37
V
- 0.60
50 - pF
10 - ns
Page 1 of 2
Rev. 01 : May 4, 2006



EIC
EIC

SD103CWS Datasheet Preview

SD103CWS Datasheet

SCHOTTKY BARRIER DIODES

No Preview Available !

SD103CWS pdf
Certificate TH97/10561QM
Certificate TW00/17276EM
RATING AND CHARACTERISTIC CURVES ( SD103AWS - SD103CWS )
Typical variation of forward current
vs. forward voltage for primary conduction
through the schottky barrier
103
102
Typical high current forward
conduction curve
tp = 300ms , duty cycle = 2%
5
4
10 3
12
10-1
10-2
0
0.5
Forward Voltage , VF (V)
1
Blocking voltage deration
versus temperature at various
average forward currents
50
40
30
IF=400 mA
20
100 mA
200 mA
10
1
0
0 0.5 1.0 1.5
Forward Voltage , VF (V)
Typical variation of reverse current
at various temperatures
103
Ta =125°C
102
10
1
25°C
0
0 100 200
Ambient Temperature, Ta (°C)
10-1
0
10 20 30 40
Reverse Voltage , VR (V)
50
Page 1 of 2
Rev. 01 : May 4, 2006


Part Number SD103CWS
Description SCHOTTKY BARRIER DIODES
Maker EIC
Total Page 2 Pages
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