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BSS129 Datasheet Preview

BSS129 Datasheet

N-Channel Depletion-Mode MOSFET Transistors

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BSS129 pdf
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ND2406L/2410L, BSS129
N-Channel Depletion-Mode MOSFET Transistors
Product Summary
Part Number
ND2406L
ND2410L
BSS129
V(BR)DSV Min (V)
240
230
rDS(on) Max (W)
6
10
20
VGS(off) (V)
–1.5 to –4.5
–0.5 to –2.5
–0.7 (min)
ID (A)
0.23
0.18
0.15
Features
Benefits
D High Breakdown Voltage: 260 V
D Normally “On” Low rDS Switch: 3.5 W
D Low Input and Output Leakage
D Low-Power Drive Requirement
D Low Input Capacitance
D Full-Voltage Operation
D Low Offset Voltage
D Low Error Voltage
D Easily Driven Without Buffer
D High-Speed Switching
Applications
D Normally “On” Switching Circuits
D Current Sources/Limiters
D Power Supply, Converter Circuits
D Solid-State Relays
D Telecom Switches
TO-226AA
(TO-92)
S1
TO-92-18CD
(TO-18 Lead Form)
S1
G2
D2
D3
G3
Top View
ND2406L
ND2410L
Top View
BSS129
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Symbol ND2406L ND2410L BSS129 Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Currenta
TA= 25_C
TA= 100_C
Power Dissipation
Maximum Junction-to-Ambient
TA= 25_C
TA= 100_C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PD
RthJA
TJ, Tstg
240
"30
0.23
0.14
0.9
0.8
0.32
156
240
"30
0.18
0.12
0.9
0.8
0.32
156
–55 to 150
230
"20
0.15
0.6
1.0
0.4
125
V
A
W
_C/W
_C
Notes
a. Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70198.
Applications information may also be obtained via FaxBack, request document #70612.
Siliconix
S-52426—Rev. C, 14-Apr-97
1



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BSS129 Datasheet Preview

BSS129 Datasheet

N-Channel Depletion-Mode MOSFET Transistors

No Preview Available !

BSS129 pdf
ND2406L/2410L, BSS129
Specificationsa
Parameter
Static
Drain-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Gate-Body Leakage
Drain Cutoff Current
Drain-Saturation Currentc
Drain-Source On-Resistancec
Forward Transconductancec
Common Source
Output Conductancec
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingd
Turn-On Time
Turn-Off Time
Symbol
Test Conditions
Limits
ND2406L ND2410L
BSS129
Typb Min Max Min Max Min Max Unit
V(BR)DSV
VGS(off)
IGSS
ID(off)
IDSS
rDS(on)
gfs
gos
VGS = –9 V, ID = 10 mA
VGS = –5 V, ID = 10 mA
VGS = –3 V, ID = 250 mA
VDS = 5 V, ID = 10 mA
VDS = 3 V, ID = 1 mA
VDS = 0 V, VGS = "20 V
TJ = 125_C
VDS = 180 V, VGS = –9 V
TJ = 125_C
VDS = 180 V, VGS = –5 V
TJ = 125_C
VDS = 230 V, VGS = –3 V
TJ = 125_C
VDS = 10 V, VGS = 0 V
VGS = 2 V, ID = 30 mA
VGS = 0 V, ID = 30 mA
TJ = 125_C
VGS = 0 V, ID = 14 mA
VDS = 25 V, ID = 250 mA
VDS = 10 V, ID = 30 A
260 240
260 240
260 230
–1.5 –4.5 –0.5 –2.5
V
–0.7
"10
"50
"10 "100
nA
"50
1
200
1
mA
200
0.1
200
350 40
40
mA
3.3
4.5 6
7.2 15
10
25
W
4 20
375 140
mS
110
70 mS
Ciss 70
Coss
VDS = 25 V, VGS = –5 V
f = 1 MHz
20
Crss 10
120 120
30 30
15 15
td(on)
tr
td(off)
tf
VDD = 25 V, RL = 830 W
ID ^ 30 mA, VGEN = -5 V
RG = 25 W
15
75
40
100
pF
ns
Notes
a. TA = 25_C unless otherwise noted.
b. For DESIGN AID ONLY, not subject to production testing.
c. Pulse test: PW v300 ms duty cycle v2%.
d. Switching time is essentially independent of operating temperature.
2
VDDV24
Siliconix
S-52426—Rev. C, 14-Apr-97


Part Number BSS129
Description N-Channel Depletion-Mode MOSFET Transistors
Maker ETC
Total Page 4 Pages
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