http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





ETC
ETC

CMT2N7002E Datasheet Preview

CMT2N7002E Datasheet

SMALL SIGNAL MOSFET

No Preview Available !

CMT2N7002E pdf
CMT2N7002E
SMALL SIGNAL MOSFET
GENERAL DESCRIPTION
FEATURES
This N-Channel enhancement mode field effect transistor is
produced using high cell density, DMOS technology. These
products have been designed to minimize on-state
resistance while provide rugged, reliable, and fast switching
performance. This product is particularly suited for low
voltage, low current applications such as small servo motor
control, power MOSFET gate drivers, and other switching
applications.
Low On-Resistance: 3
Low Threshold: 2V (typ.)
Low Input Capacitance: 25pF
Fast Switching Speed: 7.5ns
Low Input and Output Leakage
PIN CONFIGURATION
SOT-23
Top View
3
SYMBOL
D
12
ORDERING INFORMATION
Part Number
CMT2N7002E
CMT2N7002EG*
*Note: G : Suffix for Pb Free Product
Package
SOT-23
SOT-23
ABSOLUTE MAXIMUM RATINGS
Rating
Drain Source Voltage
Drain-Gate Voltage (RGS = 1.0M)
Continuous Drain Current (TJ = 150 )
Pulsed Drain Current (Note 1)
TA = 25
TA = 70
Gate-to-Source Voltage
Total Power Dissipation
TA = 25
TA = 70
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient
Note1: Pulse Width limited by maximum junction temperature.
G
S
N-Channel MOSFET
Symbol
VDSS
VDGR
ID
IDM
VGS
PD
TJ, TSTG
θJA
Value
60
60
240
190
1300
±20
0.35
0.22
-55 to 150
357
Unit
V
V
mA
mA
V
W
/W
2004/11/05 Preliminary Rev. 2
Champion Microelectronic Corporation
Page 1



ETC
ETC

CMT2N7002E Datasheet Preview

CMT2N7002E Datasheet

SMALL SIGNAL MOSFET

No Preview Available !

CMT2N7002E pdf
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25 .
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 10 A)
Zero Gate Voltage Drain Current
(VDS = 60 V, VGS = 0 V)
(VDS = 60 V, VGS = 0 V, TC = 125 )
Gate Body Leakage (VDS = 0 V, VGS = ±15 V)
Gate Threshold Voltage *
(VDS = VGS, ID = 250 A)
On-State Drain Current (Note 2)
(VDS = 7.5 V, VGS = 10V)
(VDS = 10 V, VGS = 4.5V)
Static Drain-Source On-Resistance (Note 2)
(VGS = 10 V, ID = 0.25A)
(VGS = 4.5 V, ID = 0.2A)
Diode Forward On-Voltage (IS = 200 mA, VGS = 0V)
Forward Transconductance (VDS = 15 V, ID = 200mA) (Note 2)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz) (Note 1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz) (Note 1)
Turn-On Delay Time (Note 1,3)
Turn-Off Delay Time (Note 1,3)
(VDD = 10 V, ID = 250 mA,
VGEN = 10 V, RG = 10, RL = 40)
Note 1: For Design Aid Only, not subject to production testing.
Note 2: Pulse test: PW <= 300µs duty cycle <=2%
Note 3: Switching time is essentially independent of operating temperature.
CMT2N7002E
SMALL SIGNAL MOSFET
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
Id(on)
RDS(on)
VSD
gFS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
td(off)
CMT2N7002E
Min Typ Max
60 68
Units
V
1.0 A
500 A
±10 nA
1.0 2.0 2.5
V
800 1900
350 450
mA
1.9 3
3.5 4
0.85 1.2
V
150 260
mmhos
0.4 0.6 nC
0.06 nC
0.06 nC
21 pF
7 pF
2.5 pF
13 20 ns
18 25 ns
2004/11/05 Preliminary Rev. 2
Champion Microelectronic Corporation
Page 2


Part Number CMT2N7002E
Description SMALL SIGNAL MOSFET
Maker ETC
Total Page 6 Pages
PDF Download
CMT2N7002E pdf
CMT2N7002E Datasheet PDF
[partsNo] view html
View PDF for Mobile








Similar Datasheet

1 CMT2N7002 SMALL SIGNAL MOSFET Formosa MS
Formosa MS
CMT2N7002 pdf
2 CMT2N7002E SMALL SIGNAL MOSFET ETC
ETC
CMT2N7002E pdf





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components

Privacy Policy