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FP10R06KL4 Datasheet Preview

FP10R06KL4 Datasheet

Elektrische Eigenschaften / Electrical properties

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FP10R06KL4 pdf
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FP10R06KL4
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Vorläufig
Preliminary
Diode Gleichrichter/ Diode Rectifier
Periodische Rückw. Spitzensperrspannung
repetitive peak reverse voltage
Tvj =25°C
VRRM
800
Durchlaßstrom Grenzeffektivwert pro Chip
RMS forward current per chip
TC =80°C
Gleichrichter Ausgang Grenzeffektivstrom
maximum RMS current at Rectifier output
Stoßstrom Grenzwert
surge forward current
Grenzlastintegral
I2t - value
TC =80°C
tP = 10 ms,
tP = 10 ms,
tP = 10 ms,
tP = 10 ms,
Tvj = 25°C
Tvj = 150°C
Tvj = 25°C
Tvj = 150°C
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Tvj =25°C
Kollektor-Dauergleichstrom
DC-collector current
TC =80°C
TC = 25 °C
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
tP = 1 ms,
TC =80°C
Gesamt-Verlustleistung
total power dissipation
TC = 25°C
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
IFRMSM
IRMSmax
IFSM
I2t
VCES
IC,nom.
IC
ICRM
Ptot
VGES
23
36
197
158
194
125
600
10
15
20
55
+/- 20V
Diode Wechselrichter/ Diode Inverter
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral
I2t - value
tP = 1 ms
VR = 0V, tp = 10ms, Tvj = 125°C
IF 10
IFRM
20
I2t 12
Transistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Tvj =25°C
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
TC =80 °C
TC = 25 °C
tP = 1 ms, Tc=80°C
Gesamt-Verlustleistung
total power dissipation
TC = 25°C
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
VCES
IC,nom.
IC
ICRM
Ptot
VGES
600
10
15
20
55
+/- 20V
Diode Brems-Chopper/ Diode Brake-Chopper
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
tP = 1 ms
IF 10
IFRM
20
prepared by: Thomas Passe
approved by: Ingo Graf
date of publication: 2002-02-13
revision: 6
V
A
A
A
A
A2s
A2s
V
A
A
A
W
V
A
A
A2s
V
A
A
A
W
V
A
A
1(12)



ETC
ETC

FP10R06KL4 Datasheet Preview

FP10R06KL4 Datasheet

Elektrische Eigenschaften / Electrical properties

No Preview Available !

FP10R06KL4 pdf
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FP10R06KL4
Modul Isolation/ Module Isolation
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate
Vorläufig
Preliminary
VISOL
2,5
kV
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier
Durchlaßspannung
forward voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Sperrstrom
reverse current
Tvj = 150°C,
Tvj = 150°C
Tvj = 150°C
Tvj = 150°C,
I F = 10 A
V R = 800 V
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
TC = 25°C
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
VGE = 15V, Tvj = 25°C, IC = 10 A
VGE = 15V, Tvj = 125°C, IC = 10 A
Gate-Schwellenspannung
gate threshold voltage
VCE = VGE, Tvj = 25°C, IC = 0,35mA
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V
VGE = 0V, Tvj =125°C, VCE = 600V
Gate-Emitter Reststrom
gate-emitter leakage current
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
VCE = 0V, VGE =20V, Tvj =25°C
IC = INenn,
VCC =
VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 25°C, RG =
VGE = ±15V, Tvj = 125°C, RG =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 125°C, RG =
LS =
IC = INenn,
VCC =
VGE = ±15V, Tvj = 125°C, RG =
LS =
tP £ 10µs, VGE £ 15V, RG =
Tvj£125°C,
VCC =
dI/dt =
300 V
82 Ohm
82 Ohm
300 V
82 Ohm
82 Ohm
300 V
82 Ohm
82 Ohm
300 V
82 Ohm
82 Ohm
300 V
82 Ohm
80 nH
300 V
82 Ohm
80 nH
82 Ohm
360 V
400 A/µs
min. typ. max.
VF - 0,9 - V
V(TO) - 0,67 -
V
rT - 21 - mW
IR - 5 - mA
RAA'+CC'
-
11
- mW
VCE sat
min.
-
-
typ.
1,95
2,2
max.
2,55
-
VGE(TO)
4,5
5,5
6,5
V
V
V
Cies - 0,8 - nF
ICES - 5,0 - mA
IGES
-
- 400 nA
td,on
-
32
-
ns
- 30 - ns
tr - 26 - ns
- 28 - ns
td,off - 234 - ns
- 230 -
ns
tf - 10 - ns
- 30 - ns
Eon - 0,36 - mWs
Eoff - 0,44 - mWs
ISC - 40 - A
2(12)


Part Number FP10R06KL4
Description Elektrische Eigenschaften / Electrical properties
Maker ETC
Total Page 12 Pages
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FP10R06KL4 pdf
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