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HW-305B Datasheet Preview

HW-305B Datasheet

InSb Hall Element

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HW-305B pdf
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InSb Hall Element
HW-305B
•High-sensitivity Hall element.
•SIP package, can be surface mounted.
•Shipped in bulk (500pcs per pack).
Note : It is requested to read and accept "IMPORTANT NOTICE".
Please be aware that AKE products are not intended for use in life
support equipment, devices, or systems. Use of AKE products in such
applications requires the advance written approval of the appropriate
AKE officer.
Certain applications using semiconductor devices may involve potential
risks of personal injury, property damage, or loss of life. In order to
minimize these risks, adequate design and operating safeguards
should be provided by the customer to minimize inherent or procedural
hazards. Inclusion of AKE products in such applications is understood to
be fully at the risk of the customer using AKE devices or systems.
•Absolute Maximum Ratings
Item
Symbol
Limit
Unit
Max. Input Current Ic Const. Current Drive
20
mA
Operating Temp. Range Topr.
–40 to +110
˚C
Storage Temp. Range Tstg.
–40 to +125
˚C
•Classification of Output Hall Voltage (VH)
•Electrical Characteristics(Ta=25˚C)
Item
Symbol
Conditions
Min. Typ. Max. Unit
Output Hall Voltage VH
Const. Voltage Drive
B=50mT, Vc=IV
168
320 mV
Rank
C
D
E
VH [ mV ]
168 to 204
196 to 236
228 to 274
Conditions
B=50mT, Vc=IV
Constant Voltage Drive
Input Resistance Rin B=0mT, Ic=0.1mA
Output Resistance Rout B=0mT, Ic=0.1mA
Offset Voltage Vos B=0mT, Vc=IV
Temp. Coefficient of VH VH B=50mT, Ic=5mA
240 550
F 266 to 320
Note : When ordering, specify 3-rank or wider range(e·g·,BCD).
240 55D0ataSheet4U.cInopmut Current Derating Curve
–7 +7 mV
–1.8
%/˚C
20
Input Resistance
Rin : 240 to 550
Temp. Coefficient of Rin Rin B=0mT, Ic=0.1mA
–1.8
Dielectric Strength
100V D.C
1.0
Notes : 1. VH = VHM – Vos (VHM:meter indication)
2.
VH =
1
VH (T1)
X
VH (T3) – VH (T2)
(T3 – T2)
X 100
3.
Rin =
1
Rin (T1)
X
Rin (T3) – Rin (T2)
(T3 – T2)
X
100
T1 = 20˚C, T2 = 0˚C, T3 = 40˚C
•Dimensional Drawing (mm)
1.5±0.1
0.6
0.5
0.3
2.9±0.1
1.8
1.45
0.6
%/˚C
M
10
0
– 40 – 20
0 20 40 60 80 100 120
Ambient Temperature.(˚C)
Note : Rin of Hall element decreases rapidly as ambient temperature
increases. Ensure compliance with input current derating curve envelope,
throughout the operating temperature range.
•Input Voltage Derating Curve
Input Resistance
2.0 Rin : 240 to 550
2.0
N
DataSheet4U.com
0 to 0.1
0.1
d1.2
DataSheet4 U .com
1.0
Pinning
Input
Output
1(±)
2(±)
3
4
0
– 40 – 20
0 20 40 60 80 100 120
Ambient Temperature.(˚C)
Note : For constant-voltage drive, stay within this input voltage derating
curve envelope.
29 DataSheet4U.com



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HW-305B Datasheet Preview

HW-305B Datasheet

InSb Hall Element

No Preview Available !

HW-305B pdf
www.DataSheet4U.com
HW-305B
•Characteristic Curves
Rin-T
2000
1800
1600
1400
1200
1000
800
600
400
200
0
-50 0 50 100
Ambient Temperature(˚C)
a
VH-B
600.0
500.0
400.0
300.0
200.0
Ic const
Vc const
Ic = 5 (mA)
Vc = 1 (V)
Ta = 25 (˚C)
Ic
Vin
c
100.0
0.0
150 0 10 20 30 40 50
Magnetic Flux Density B (mT)
VH-T
2000
1750
1500
1250
Ic
VH-Vc, VH-Ic
1200
Ic const
VDc caotnastSheet4U.com1000
Ic const
Vc const
Ic = 5 (mA)
Vc = 1 (V)
B = 50 (mT)
B = 50 (mT)
800 Ta = 25 (˚C)
Ic
1000
750
500
Vin
250
0
–50
0 50 100
Ambient Temperature(˚C)
150
600
400
200
0
0.0
Vin
5 10 15
0.5 1.0 1.5
Ic (mA) Input Current
Vc (V) Input Voltage
f
20 Ic:(mA)
2.0 Vc:(V)
VOS-T
40
30
20
Ic
Ic const
Vc const
Ic = 5 (mA)
Vc = 1 (V)
B = 0 ([mT)
10
Vin
0
–50
0 50 100
Ambient Temperature(˚C)
150
DataSheet4U.com
*Magnetic Flux Density
1(mT)=10(G)
VOS-Vc, VOS-Ic
20
18 Ic const
16 Vc const
B = 0 (mT)
14 Ta = 25 (˚C)
12
10
8
6
4
2
05
0.0 0.5
Ic
Vin
10
1.0
Ic (mA) Input Current
Vc (V) Input Voltage
15
1.5
In This Example : Rin=350( ), Vos=4.7(mV), Vc=1(V)
i
20 Ic:(mA)
2.0 Vc:(V)
DataSheet4 U .com
30 DataSheet4U.com


Part Number HW-305B
Description InSb Hall Element
Maker ETC
Total Page 2 Pages
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