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TLP521-4GB Datasheet Preview

TLP521-4GB Datasheet

HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS

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TLP521-4GB pdf
TLP521GB, TLP521-2GB, TLP521-4GB, TLP521, TLP521-2, TLP521-4
TLP521XGB, TLP521-2XGB, TLP521-4XGB
TLP521X, TLP521-2X, TLP521-4X
HIGH DENSITY MOUNTING
PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
APPROVALS
l UL recognised, File No. E91231
TLP521
2.54 Dimensions in mm
'X' SPECIFICATION APPROVALS
l VDE 0884 in 3 available lead form : -
- STD
- G form
- SMD approved to CECC 00802
l BSI approved - Certificate No. 8001
DESCRIPTION
The TLP521, TLP521-2, TLP521-4 series of
optically coupled isolators consist of infrared
light emitting diodes and NPN silicon photo
transistors in space efficient dual in line plastic
packages.
FEATURES
l Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
l High Current Transfer Ratio ( 50% min)
l High Isolation Voltage (5.3kVRMS ,7.5kVPK )
l High BVCEO ( 55Vmin )
l All electrical parameters 100% tested
l Custom electrical selections available
APPLICATIONS
l Computer terminals
l Industrial systems controllers
l Measuring instruments
l Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
OPTION G
7.62
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
1.2
5.08
4.08
3.0
TLP521-2 0.5
2.54
1.2
10.16
9.16
3.0
0.5
TLP521-4
2.54
1.2
20.32
19.32
7.0 1
6.0 2
4
3
4.0
3.0
0.5
3.35
7.62
13°
Max
0.26
1
2
7.0 3
6.0
4
8
7
6
5
4.0
3.0
0.5
3.35
7.0
6.0
7.62
0.26
1
2
3
4
5
6
7
8
13°
Max
16
15
14
13
12
11
10
9
4.0
3.0
0.5
0.5 3.35
7.62
0.26
13°
Max
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/4/03
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel:(214)495-0755 Fax:(214)495-0901
e-mail info@isocom.com
http://www.isocom.com
DB92546m-AAS/A3



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TLP521-4GB Datasheet Preview

TLP521-4GB Datasheet

HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS

No Preview Available !

TLP521-4GB pdf
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-30°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
50mA
6V
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BVECO
Power Dissipation
55V
6V
150mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Forward Voltage (V )
F
1.0 1.15 1.3 V
Reverse Current (IR)
10 µA
Output
Collector-emitter Breakdown (BVCEO)
( Note 2 )
Emitter-collector Breakdown (BV )
ECO
Collector-emitter Dark Current (ICEO)
55
6
V
V
100 nA
Coupled
Current Transfer Ratio (CTR) (Note 2)
TLP521, TLP521-2, TLP521-4
CTR selection available BL
GB
GB
50
200
100
30
600 %
600 %
600 %
%
Collector-emitter Saturation VoltageV
CE (SAT)
-GB
0.4 V
0.4 V
Input to Output Isolation Voltage V
ISO
Input-output Isolation Resistance RISO
Response Time (Rise), tr
Response Time (Fall), tf
5300
7500
5x1010
4
3
V
RMS
VPK
µs
µs
I = 10mA
F
VR = 4V
IC = 0.5mA
I
E
=
100µA
VCE =20V
5mA IF , 5V VCE
1mA IF , 0.4V VCE
8mA I , 2.4mA I
FC
1mA IF , 0.2mA IC
See note 1
See note 1
VIO= 500V (note 1)
V = 2V ,
CE
IC = 2mA, RL = 100
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
7/4/03 DB92546m-AAS/A3


Part Number TLP521-4GB
Description HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS
Maker ETC
Total Page 3 Pages
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