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TN2010T Datasheet Preview

TN2010T Datasheet

N-Channel Enhancement-Mode MOSFET Transistor

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TN2010T
N-Channel Enhancement-Mode MOSFET Transistor
Product Summary
V(BR)DSS Min (V)
200
rDS(on) Max (W)
11
VGS(th) (V)
0.8 to 3.0
ID (A)
0.12
Features
D Low On-Resistance: 9.5 W
D Secondary Breakdown Free: 220 V
D Low Power/Voltage Driven
D Low Input and Output Leakage
D Excellent Thermal Stability
Benefits
D Low Offset Voltage
D Full-Voltage Operation
D Easily Driven Without Buffer
D Low Error Voltage
D No High-Temperature
“Run-Away”
Applications
D High-Voltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays, Transistors, etc.
D Telephone Mute Switches, Ringer Circuits
D Power Supply, Converters
D Motor Control
TO-236
(SOT-23)
G1
S2
3D
Top View
TN2010T (R1)*
*Marking Code for TO-236
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(TJ = 150_C)
Pulsed Drain Currenta
TA= 25_C
TA= 70_C
Power Dissipation
Maximum Junction-to-Ambient
TA= 25_C
TA= 70_C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PD
RthJA
TJ, Tstg
200
"20
0.12
0.08
0.34
0.35
0.22
357
–55 to 150
V
A
W
_C/W
_C
Notes
a. Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70203.
Siliconix
S-52426—Rev. C, 14-Apr-97
1



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TN2010T Datasheet Preview

TN2010T Datasheet

N-Channel Enhancement-Mode MOSFET Transistor

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TN2010T pdf
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TN2010T
Specificationsa
Parameter
Symbol
Test Conditions
Static
Drain-SourceBreakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentc
Drain-Source On-Resistancec
Forward Transconductancec
Diode Forward Voltage
Dynamic
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VGS = 0 V, ID = 100 mA
VDS = VGS, ID = 0.25 mA
VDS = 0 V, VGS = "20 V
VDS = 160 V, VGS = 0 V
TJ = –55_C
VDS = 10 V, VGS = 10 V
VGS = 10 V, ID = 0.1 A
VGS = 4.5 V, ID = 0.05 mA
VDS = 10 V, ID = 0.1 A
IS = 0.085 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingd
Qg
Qgs VDS = 100 V, VGS = 10 V, ID ] 0.1 A
Qgd
Ciss
Coss VDS = 25 V, VGS = 0 V, f = 1 MHz
Crss
Turn-On Time
Turn-Off Time
td(on)
tr
td(off)
tf
VDD = 60 V, RL = 600 W
ID ^ 0.1 A, VGEN = 10 V
RG = 6 W
Notes
a. TA = 25_C unless otherwise noted.
b. For DESIGN AID ONLY, not subject to production testing.
c. Pulse test: PW v300 ms duty cycle v2%.
d. Switching time is essentially independent of operating temperature.
Limits
Min Typb Max
Unit
200 220
0.8 1.6
3.0
V
"100 nA
1
mA
10
0.3 mA
9.5 11
10 15
W
300 mS
0.8 V
1750
275
300
35
6
2
pC
pF
4
16
ns
16
45
2 Siliconix
S-52426—Rev. C, 14-Apr-97


Part Number TN2010T
Description N-Channel Enhancement-Mode MOSFET Transistor
Maker ETC
Total Page 4 Pages
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1 TN2010T N-Channel Enhancement-Mode MOSFET Transistor ETC
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2 TN2010T N-Channel Enhancement-Mode MOSFET Transistor Siliconix
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