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C30659-1550-R08BH Datasheet Preview

C30659-1550-R08BH Datasheet

Si and InGaAs APD Preamplifier Modules

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C30659-1550-R08BH pdf
DATASHEET
Photon Detection
C30659 Series 900/1060/1550/1550E
Si and InGaAs APD Preamplifier Modules
Excelitas’ C30659-1550E InGasAs APD Preamplifier Modules exhibit enhanced damage threshold
and greater resilience when exposed to higher optical power densities.
Excelitas Technologies’ C30659 Series includes a Si or InGaAs Avalanche Photodiode
(APD) with a hybrid preamplifier, in the same hermetically-sealed TO-8 package, to
allow for ultra-low noise operation.
The Si APDs used in these devices are the same as used in Excelitas’ C30817EH,
C30902EH, C30954EH and C30956EH products, while the InGaAs APDs are used in
the C30645EH and C30662EH products. These detectors provide very good response
between 830 and 1550 nm and very fast rise- and fall-times at all wavelengths. The
preamplifier section of the module uses a very low noise GaAs FET front end
designed to operate at higher transimpedance than Excelitas’ regular C30950 Series.
The C30659 is pin-to-pin compatible with the C30950 Series with a negative output.
An emitter follower is used as an output buffer stage. To obtain the wideband
characteristics, the output of these devices should be capacitively- or AC-coupled to
a 50 termination. The module must not be DC-coupled to loads of less than 2,000
Ohms. For field use, it is recommended that a temperature-compensated HV supply
be employed to maintain a constant responsivity over temperature.
Excelitas’ InGaAs C30659-1550E Preamplifier Modules, with 1550 nm peak
response, are designed to exhibit higher damage thresholds, thus providing
greater resilience when exposed to high optical power densities.
Customization of the C30659 Series of APD Preamplifier Modules is available
to meet your specific design challenges; modifications include bandwidth and gain
optimization, use of different APDs, FC-connectorized packaging.
www.excelitas.com
C30659 Series-Rev.1.1-2013.06 Page 1 of 10
Key Features
System bandwidths of 50 MHz
and 200MHz
Ultra low noise equivalent
power (NEP)
Spectral response range:
With Si APD: 400 to 1100 nm
With InGaAs APD: 1100 to
1700 nm
Typical power consumption: 150 mW
±5 V amplifier operating voltages
50 Ω AC load capability (AC-Coupled)
Hermetically-sealed TO-8 package
High reliability
Fast overload recovery
Pin-to-pin compatible with the
C30950 Series
Light entry angle, over 130°
Model 1550E exhibits enhanced
damage threshold
RoHS-compliant
Applications
Range finding
LIDAR
Confocal microscopy



Excelitas
Excelitas

C30659-1550-R08BH Datasheet Preview

C30659-1550-R08BH Datasheet

Si and InGaAs APD Preamplifier Modules

No Preview Available !

C30659-1550-R08BH pdf
C30659 Series 900/1060/1550/1550E
Si and InGaAs APD Preamplifier Modules
Table 1. Performance Specifications − C30659-900 Models (900 nm peak response Si APD)
Test conditions: Case temperature = 22˚C, Vamp = ±5 V, HV = Vop (see Note 1), RL = 50 Ω AC coupled
Detector Type
C30659-900-R8AH
(C30817EH APD)
C30659-900-R5BH
(C30902EH APD)
Parameter
Min Typical Max Min Typical Max
Units
Active diameter
0.8 0.5 mm
Active area
0.5 0.2 mm²
Nominal field of view α (see Figure 8)
147 148 Degrees
Nominal field of view α’ (see Figure 8)
151 151 Degrees
System bandwidth, f-3dB
40 50
175 200
MHz
Bandwidth range
50 200 MHz
Temperature coefficient of Vop for constant gain
Vop for specified responsivity
2.2 0.7
275 Note 1 435 180 Note 1 260
V/˚C
V
Temperature sensor sensitivity (Note 2)
-1.8 -2.1 -2.4 -1.8 -2.1 -2.4
mV/˚C
Responsivity
at 830 nm
at 900 nm
Rf (Internal feedback resistor)
Noise equivalent power (NEP) (Note 3)
Average from 100 kHz to f-3dB, ∆f = 1.0 Hz
at 830 nm
at 900 nm
Output spectral noise voltage
Averaged from 100 kHz to f-3dB
2700
3000
82
14 17
12 15
35 45
460
400
12
35 55
40 65
15 25
Output impedance
33 40 50 33 40 50
kV/W
kV/W
kΩ
fW/Hz
fW/Hz
nV/Hz
Rise time, tr (= 830 and 900 nm)
10% to 90% points
72
Fall time, tf (= 830 and 900 nm)
90% to 10% points
72
Recovery time after overload (Note 4)
150 150
Output voltage swing (1 kΩ load) (Note 5)
23
23
Output voltage swing (50 Ω load) (Note 5)
0.7 0.9
0.7 0.9
DC output offset voltage
-1 0.25 1 -1 0.25 1
Positive supply current (V+)
20 35
20 35
Negative supply current (V-)
10 20
10 20
Notes:
1.
2.
3.
4.
5.
A specific value of Vop is supplied with each device. The Vop value will be within the specified range.
If = 0.1 mA at 25˚C.
NEP is calculated as the output spectral noise voltage divided by the typical responsivity.
0 dBm with 250 ns pulses.
Pulsed operation.
ns
ns
ns
V
V
V
mA
mA
www.excelitas.com
Page 2 of 10
C30659 Series-Rev.1.1-2013.06


Part Number C30659-1550-R08BH
Description Si and InGaAs APD Preamplifier Modules
Manufacturer Excelitas
Total Page 10 Pages
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