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Fairchild Semiconductor Electronic Components Datasheet

MOC213M Datasheet

Small Ouline Optocouplers Transistor Output

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MOC213M pdf
April 2013
MOC211M, MOC212M, MOC213M
Small Ouline Optocouplers Transistor Output
Features
UL Recognized (File #E90700, Volume 2)
VDE Recognized (File #136616) (add option ‘V’ for
VDE approval, e.g., MOC211VM)
Convenient Plastic SOIC-8 Surface Mountable
Package Style
Standard SOIC-8 Footprint, with 0.050" Lead Spacing
High Input-Output Isolation of 2500 VAC(rms)
Guaranteed
Minimum BVCEO of 30V Guaranteed
Applications
General Purpose Switching Circuits
Interfacing and Coupling Systems of Different
Potentials and Impedances
Regulation Feedback Circuits
Monitor and Detection Circuits
Description
These devices consist of a gallium arsenide infrared
emitting diode optically coupled to a monolithic silicon
phototransistor detector, in a surface mountable, small
outline, plastic package. They are ideally suited for high
density applications, and eliminate the need for through-
the-board mounting.
Schematic
ANODE 1
CATHODE 2
N/C 3
N/C 4
8 N/C
7 BASE
6 COLLECTOR
5 EMITTER
Figure 1. Schematic
Package Outline
Figure 2. Package Outline
©2005 Fairchild Semiconductor Corporation
MOC211M, MOC212M, MOC213M Rev. 1.0.2
www.fairchildsemi.com
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Fairchild Semiconductor Electronic Components Datasheet

MOC213M Datasheet

Small Ouline Optocouplers Transistor Output

No Preview Available !

MOC213M pdf
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified.
Symbol
Rating
Value
Unit
Emitter
IF
IF (pk)
VR
PD
Forward Current – Continuous
Forward Current – Peak (PW = 100 µs, 120 pps)
Reverse Voltage
LED Power Dissipation @ TA = 25°C
Derate above 25°C
60 mA
1.0 A
6.0 V
90 mW
0.8 mW/°C
Detector
VCEO
VECO
VCBO
IC
PD
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector-Base Voltage
Collector Current-Continuous
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
30 V
7.0 V
70 V
150 mA
150 mW
1.76 mW/°C
Total Device
VISO
Input-Output Isolation Voltage
(f = 60 Hz, t = 1 minute)(1)(2)(3)
2500
Vac(rms)
PD Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
250 mW
2.94 mW/°C
TA Ambient Operating Temperature Range
Tstg Storage Temperature Range
TL Lead Soldering Temperature
(1/16" from case, 10 second duration)
-40 to +100
-40 to +150
260
°C
°C
°C
Notes:
1. Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating.
2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
3. VISO rating of 2500 VAC(rms) for t = 1 minute is equivalent to a rating of 3,000 VAC(rms) for t = 1 second.
©2005 Fairchild Semiconductor Corporation
MOC211M, MOC212M, MOC213M Rev. 1.0.2
2
www.fairchildsemi.com


Part Number MOC213M
Description Small Ouline Optocouplers Transistor Output
Maker FAIRCHILD
Total Page 10 Pages
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