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Fairchild Semiconductor Electronic Components Datasheet

2010DN Datasheet

FYP2010DN

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2010DN pdf
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FYP2010DN
Features
• Low forward voltage drop
• High frequency properties and switching speed
• Guard ring for over-voltage protection
Applications
• Switched mode power supply
• Freewheeling diodes
123
TO-220
1. Anode 2.Cathode 3. Anode
SCHOTTKY BARRIER RECTIFIER
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VRRM
VR
IF(AV)
IFSM
Maximum Repetitive Reverse Voltage
Maximum DC Reverse Voltage
Average Rectified Forward Current
@ TC = 120°C
Non-repetitive Peak Surge Current (per diode)
60Hz Single Half-Sine Wave
TJ, TSTG
Operating Junction and Storage Temperature
Thermal Characteristics
Symbol
RθJC
Parameter
Maximum Thermal Resistance, Junction to Case (per diode)
Electrical Characteristics (per diode)
Symbol
VFM *
IRM *
Parameter
Maximum Instantaneous Forward Voltage
IF = 10A
IF = 10A
IF = 20A
IF = 20A
Maximum Instantaneous Reverse Current
@ rated VR
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
Value
100
100
20
150
-65 to +150
Value
1.7
Value
0.77
0.65
-
0.75
0.1
20
Units
V
V
A
A
°C
Units
°C/W
Units
V
mA
©2002 Fairchild Semiconductor Corporation
Rev. A, September 2002


Fairchild Semiconductor Electronic Components Datasheet

2010DN Datasheet

FYP2010DN

No Preview Available !

2010DN pdf
www.DataSheet4U.com
Typical Characteristics
100
10
1
0.1
0.01
0.0
T =125 oC
J
TJ=75 oC
TJ=25 oC
0.5 1.0
Forward Voltage Drop, VF[V]
1.5
Figure 1. Typical Forward Voltage Characteristics
(per diode)
1000
900
800
700
600
500
400
300
200
T =25 oC
J
100
90
80
0
20 40 60 80
Reverse Voltage, VR[V]
100
Figure 3. Typical Junction Capacitance
(per diode)
25
DC
20
15
10
5
0
0 20 40 60 80 100 120 140 160
Case Temperature, TC[oC]
Figure 5. Forward Current Derating Curve
©2002 Fairchild Semiconductor Corporation
10
T =125 oC
1J
T =75 oC
J
0.1
0.01
T =25 oC
J
1E-3
20
40 60 80
Reverse Voltage, VR[V]
100
Figure 2. Typical Reverse Current
vs. Reverse Voltage (per diode)
10
1
100µ
1m
10m 100m
1
Pulse Duration [s]
10
Figure 4. Thermal Impedance Characteristics
(per diode)
250
200
150
100
50
0
1 10 100
Number of Cycles @ 60Hz
Figure 6. Non-Repetive Surge Current
(per diode)
Rev. A, September 2002


Part Number 2010DN
Description FYP2010DN
Maker Fairchild Semiconductor
Total Page 4 Pages
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2010DN pdf
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