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Fairchild Semiconductor Electronic Components Datasheet

28N15 Datasheet

FQA28N15

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28N15 pdf
FQA28N15
N-Channel QFET® MOSFET
150 V, 33 A, 90 mΩ
June 2014
Description
Features
This N-Channel enhancement mode power MOSFET is 33 A, 150 V, RDS(on) = 90 m(Max.) @ VGS = 10 V,
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
ID = 16.5 A
technology has been especially tailored to reduce on-state • Low Gate Charge (Typ. 0 nC)
resistance, and to provide superior switching performance and • Low Crss (Typ. 110 pF)
high avalanche energy strength. These devices are suitable
for switched mode power supplies, audio amplifier, DC motor • 100% Avalanche Tested
control, and variable switching power applications.
175°C Maximum Junction Temperature Rating
D
G
DS
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering,
1/8" from case for 5 seconds.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
S
FQA28N15
150
33
23.3
132
± 25
300
33
22.7
5.5
227
1.52
-55 to +175
300
Thermal Characteristics

+θ 
+θ

Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQA28N15
0.66
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C

6?
6?
©2000 Fairchild Semiconductor Corporation
FQA28N15 Rev. C2
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

28N15 Datasheet

FQA28N15

No Preview Available !

28N15 pdf
Package Marking and Ordering Information
Part Number
FQA28N15
Top Mark
FQA28N15
Package
TO-3PN
Packing Method Reel Size
Tube
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted.
Test Conditions
Min. Typ. Max.
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 μA
ID = 250 μA, Referenced to 25°C
VDS = 150 V, VGS = 0 V
VDS = 120 V, TC = 150°C
VGS = 25 V, VDS = 0 V
VGS = -25 V, VDS = 0 V
150
--
--
--
--
--
--
0.17
--
--
--
--
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 16.5 A
VDS = 40 V, ID = 16.5 A
2.0 --
-- 0.067
-- 20
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1250
-- 260
-- 50
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 75 V, ID = 28 A,
RG = 25 Ω
VDS = 120 V, ID = 28 A,
VGS = 10 V
(Note 4)
(Note 4)
--
--
--
--
--
--
--
17
180
100
115
40
7.9
20
--
--
1
10
100
-100
4.0
0.09
--
1600
340
65
45
370
210
240
52
--
--
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 33 A
trr Reverse Recovery Time
VGS = 0 V, IS = 28 A,
Qrr Reverse Recovery Charge
dIF / dt = 100 A/μs
-- --
33
-- -- 132
-- --
1.5
-- 100
--
-- 0.4
--
Unit
V
V/°C
μA
μA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
μC
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 0.46 mH, IAS = 33 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 28 A, di/dt 300 A/us, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
©2000 Fairchild Semiconductor Corporation
FQA28N15 Rev. C2
2
www.fairchildsemi.com


Part Number 28N15
Description FQA28N15
Maker Fairchild Semiconductor
Total Page 8 Pages
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