http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




Fairchild Semiconductor Electronic Components Datasheet

60N100D Datasheet

FGL60N100D

No Preview Available !

60N100D pdf
FGL60N100D
IGBT
General Description
Insulated Gate Bipolar Transistors (IGBTs) with trench gate
structure have superior performance in conduction and
switching to planar gate structure, and also have wide noise
immunity. These devices are well suitable for IH
applications
Features
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.5V @ IC = 60A
• High Input Impedance
• Built-in Fast Recovery Diode
Application
Home Appliance, Induction Heater, IH JAR, Micro Wave Oven
C
TO-264
GC E
www.DataSheet.co.kr
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 100°C
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
E
FGL60N100D
1000
± 25
60
42
120
15
176
70
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.71
2.08
25
Units
V
V
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
FGL60N100D Rev. A
Datasheet pdf - http://www.DataSheet4U.net/


Fairchild Semiconductor Electronic Components Datasheet

60N100D Datasheet

FGL60N100D

No Preview Available !

60N100D pdf
Electrical Characteristics of IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
ICES
IGES
Collector Cut-Off Current
G-E Leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = 1000V, VGE = 0V
VGE = ± 25, VCE = 0V
IC = 60mA, VCE = VGE
IC = 10A, VGE = 15V
IC = 60A, VGE = 15V
VCE=10V, VGE = 0V,
f = 1MHz
VCC = 600V, IC = 60A,
RG = 51, VGE=15V,
Resistive Load, TC = 25°C
VCE = 600 V, IC = 60A,
VGE = 15V
Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol
VFM
trr
IR
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Instantaneous Reverse Current
Test Conditions
IF = 15A
www.DataSheet.co.kr
IF = 60A
IF = 60A di/dt = -20A/us
VRRM = 1000V
Min. Typ. Max. Units
-- -- 1.0 mA
-- -- ± 500 nA
4.0 5.0 7.0
-- 1.6 2.0
-- 2.5 2.9
V
V
V
-- 6300 --
-- 160 --
-- 140 --
pF
pF
pF
-- 160 400 ns
-- 360 700 ns
-- 410 700 ns
-- 240 330 ns
-- 230 300 nC
-- 45 -- nC
-- 80 -- nC
Min.
--
--
--
Typ.
1.2
1.8
1.2
0.05
Max.
1.7
2.1
1.5
2
Units
V
V
us
uA
©2002 Fairchild Semiconductor Corporation
FGL60N100D Rev. A
Datasheet pdf - http://www.DataSheet4U.net/


Part Number 60N100D
Description FGL60N100D
Maker Fairchild Semiconductor
Total Page 6 Pages
PDF Download
60N100D pdf
Download PDF File


Buy Electronic Components




Related Datasheet

1 60N100D FGL60N100D Fairchild Semiconductor
Fairchild Semiconductor
60N100D pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components