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Fairchild Semiconductor Electronic Components Datasheet

8N50NZ Datasheet

N-Channel MOSFET

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8N50NZ pdf
FDP8N50NZ / FDPF8N50NZ
N-Channel UniFETTM II MOSFET
500 V, 8 A, 850 m
October 2013
Features
• RDS(on) = 770 m(Typ.) @ VGS = 10 V, ID = 4 A
• Low Gate Charge (Typ. 14 nC)
• Low Crss (Typ. 5 pF)
• 100% Avalanche Tested
• Improve dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
Applications
• LCD/LED TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
Description
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also
provides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET II MOSFET to withstand over 2kV HBM surge
stress. This device family is suitable for switching power
converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp
ballasts.
D
G
GDS TO-220 GDS TO-220F
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDP8N50NZ FDPF8N50NZ
500
±25
8 8*
4.8 4.8*
(Note 1)
32
32*
(Note 2)
122
(Note 1)
8
(Note 1)
13
(Note 3)
10
130 40.3
1 0.3
-55 to +150
300
FDP8N50NZ FDPF8N50NZ
0.96 3.1
62.5 62.5
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2010 Fairchild Semiconductor Corporation
FDP8N50NZ / FDPF8N50NZ Rev. C2
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

8N50NZ Datasheet

N-Channel MOSFET

No Preview Available !

8N50NZ pdf
Package Marking and Ordering Information
Device Marking
FDP8N50NZ
FDPF8N50NZ
Device
FDP8N50NZ
FDPF8N50NZ
Package
TO-220
TO-220F
Reel Size
Tube
Tube
Tape Width
N/A
N/A
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250A, VGS = 0V, TC = 25oC
ID = 250A, Referenced to 25oC
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125oC
VGS = ±25V, VDS = 0V
500
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250A
VGS = 10V, ID = 4A
VDS = 20V, ID = 4A
3.0
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 400V,ID = 8A
VGS = 10V
(Note 4)
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250V, ID = 8A
RG = 25, VGS = 10V
(Note 4)
-
-
-
-
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 8A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 8A
dIF/dt = 100A/s
-
-
-
-
-
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 3.8mH, IAS = 8A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 8A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics
Typ.
-
0.5
-
-
-
-
0.77
6.3
565
80
5
14
4
6
17
34
43
27
-
-
-
228
1.43
Quantity
50 units
50 units
Max. Unit
-V
- V/oC
1
10
A
±10 A
5.0 V
0.85
-S
735 pF
105 pF
8 pF
18 nC
- nC
- nC
45 ns
80 ns
95 ns
60 ns
8A
30 A
1.4 V
- ns
- C
©2010 Fairchild Semiconductor Corporation
FDP8N50NZ / FDPF8N50NZ Rev. C2
2
www.fairchildsemi.com


Part Number 8N50NZ
Description N-Channel MOSFET
Maker Fairchild Semiconductor
Total Page 10 Pages
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