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Fairchild Semiconductor Electronic Components Datasheet

FDB8445_F085 Datasheet

N-Channel PowerTrench MOSFET

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FDB8445_F085 pdf
October 2010
FDB8445_F085
N-Channel PowerTrench® MOSFET
40V, 70A, 9mΩ
Features
„ Typ rDS(on) = 6.8mΩ at VGS = 10V, ID = 70A
„ Typ Qg(10) = 44nC at VGS = 10V
„ Low Miller Charge
„ Low Qrr Body Diode
„ UIS Capability (Single Pulse/ Repetitive Pulse)
„ Qualified to AEC Q101
„ RoHS Compliant
Applications
„ Automotive Engine Control
„ Powertrain Management
„ Solenoid and Motor Drivers
„ Electronic Transmission
„ Distributed Power Architecture and VRMs
„ Primary Switch for 12V Systems
AD FREE I
GATE
SOURCE
TO-263AB
FDB SERIES
DRAIN
(FLANGE)
D
G
S
©2010 Fairchild Semiconductor Corporation
FDB8445_F085 Rev C (W)
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDB8445_F085 Datasheet

N-Channel PowerTrench MOSFET

No Preview Available !

FDB8445_F085 pdf
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous
Pulsed
Parameter
(VGS = 10V)
(Note 1)
EAS Single Pulse Avalanche Energy
PD
Power Dissipation
Derate above 25oC
(Note 2)
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
Maximum Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient TO-263, lin2 cop-
per pad area
Ratings
40
±20
70
Figure 4
102
92
0.6
-55 to +175
1.63
43
Units
V
V
A
mJ
W
W/oC
oC
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
Device
FDB8445
FDB8445_F085
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
VDS = 32V
VGS = 0V
TJ =150°C
VGS = ±20V
40
-
-
-
- -V
- 1 μA
- 250 μA
- ±100 nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
rDS(on)
Drain to Source On Resistance
VDS = VGS, ID = 250μA
ID = 70A, VGS = 10V
ID = 70A, VGS = 10V,
TJ = 175°C
2 2.5 4
V
- 6.8 9
- 13 17.2 mΩ
Dynamic Characteristics
Ciss
Coss
Crss
RG
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V,
f = 1MHz
f = 1MHz
VGS = 0 to 10V
VGS = 0 to 2V
VDD = 20V,
ID = 70A,
-
-
-
-
-
-
-
-
-
2860
295
180
1.95
44
2.9
11
8.2
11
3805
395
270
-
62
4.1
-
-
-
pF
pF
pF
Ω
nC
nC
nC
nC
nC
FDB8445_F085 Rev C (W)
2
www.fairchildsemi.com


Part Number FDB8445_F085
Description N-Channel PowerTrench MOSFET
Maker Fairchild Semiconductor
Total Page 7 Pages
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