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Fairchild Semiconductor Electronic Components Datasheet

FDBL9406_F085 Datasheet

N-Channel PowerTrench MOSFET

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FDBL9406_F085 pdf
FDBL9406_F085
N-Channel PowerTrench® MOSFET
40 V, 240 A, 1.2 mΩ
May 2014
Features
„ Typical RDS(on) = 0.9 mΩ at VGS = 10V, ID = 80 A
„ Typical Qg(tot) = 90 nC at VGS = 10V, ID = 80 A
„ UIS Capability
„ RoHS Compliant
„ Qualified to AEC Q101
Applications
„ Automotive Engine Control
„ PowerTrain Management
„ Solenoid and Motor Drivers
„ Integrated Starter/Alternator
„ Primary Switch for 12V Systems
D
G
S
For current package drawing, please refer to the Fairchild web
site at http://www.fairchildsemi.com/dwg/PS/PSOF08A.pdf.
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
VGS
ID
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
EAS Single Pulse Avalanche Energy
PD
Power Dissipation
Derate Above 25oC
TJ, TSTG
RθJC
RθJA
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
TC = 25°C
TC = 25°C
(Note 2)
(Note 3)
Ratings
40
±20
240
See Figure 4
316
300
2.0
-55 to + 175
0.5
43
Units
V
V
A
mJ
W
W/oC
oC
oC/W
oC/W
Notes:
1: Current is limited by bondwire configuration.
2: Starting TJ = 25°C, L = 0.1mH, IAS = 79.5A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche.
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface
presented here is
of the
based
drain pins. RθJC is
on mounting on a 1
guaranteed by design,
in2 pad of 2oz copper.
while
RθJAis
determined
by
the
board
design.
The maximum rating
Package Marking and Ordering Information
Device Marking
FDBL9406
Device
FDBL9406_F085
Package
MO-299A
-
-
-
©2014 Fairchild Semiconductor Corporation
FDBL9406_F085 Rev. C2
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDBL9406_F085 Datasheet

N-Channel PowerTrench MOSFET

No Preview Available !

FDBL9406_F085 pdf
Electrical Characteristics TJ = 25°C unless otherwise noted.
Symbol
Parameter
Off Characteristics
Test Conditions
Min. Typ. Max. Units
BVDSS Drain-to-Source Breakdown Voltage
IDSS Drain-to-Source Leakage Current
IGSS
Gate-to-Source Leakage Current
On Characteristics
ID = 250μA, VGS = 0V
VDS=40V, TJ = 25oC
VGS = 0V TJ = 175oC (Note 4)
VGS = ±20V
40
-
-
-
- -V
- 1 μA
- 1 mA
- ±100 nA
VGS(th)
RDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
Dynamic Characteristics
VGS = VDS, ID = 250μA
ID = 80A, TJ = 25oC
VGS= 10V TJ = 175oC (Note 4)
2.0
-
-
3.2 4.0
0.90 1.20
1.64 1.86
V
mΩ
mΩ
Ciss
Coss
Crss
Rg
Qg(ToT)
Qg(th)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate-to-Source Gate Charge
Gate-to-Drain “Miller“ Charge
Switching Characteristics
VDS = 25V, VGS = 0V,
f = 1MHz
f = 1MHz
VGS = 0 to 10V
VGS = 0 to 2V
VDD = 32V
ID = 80A
- 7735
-
pF
- 2160
-
pF
- 129 - pF
- 2.5 - Ω
- 90 107 nC
- 13.5 15.5 nC
- 43 - nC
- 10 - nC
ton
td(on)
tr
td(off)
tf
toff
Turn-On Time
Turn-On Delay
Rise Time
Turn-Off Delay
Fall Time
Turn-Off Time
Drain-Source Diode Characteristics
VDD = 20V, ID = 80A,
VGS = 10V, RGEN = 6Ω
- - 102 ns
- 33 - ns
- 40 - ns
- 47 - ns
- 23 - ns
- - 91 ns
VSD Source-to-Drain Diode Voltage
trr Reverse-Recovery Time
Qrr Reverse-Recovery Charge
ISD =80A, VGS = 0V
ISD = 40A, VGS = 0V
IF = 80A, dISD/dt = 100A/μs,
VDD=32V
--
--
- 91
- 128
Note:
4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
1.25
1.2
107
167
V
V
ns
nC
FDBL9406_F085 Rev. C2
2
www.fairchildsemi.com


Part Number FDBL9406_F085
Description N-Channel PowerTrench MOSFET
Maker Fairchild Semiconductor
Total Page 6 Pages
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