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Fairchild Semiconductor Electronic Components Datasheet

FDD8445_F085 Datasheet

N-Channel PowerTrench MOSFET

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FDD8445_F085 pdf
January 2010
FDD8445_F085
N-Channel PowerTrench® MOSFET
40V, 50A, 8.7mΩ
Features
„ RDS(ON) = 6.7 mΩ (Typ), VGS = 10V, ID=50A
„ Qg(10) = 45nC (Typ), VGS=10V
„ Low Miller Charge
„ Low Qrr Body Diode
„ UIS Capability (Single Pulse/ Repetitive Pulse)
„ Qualified to AEC Q101
„ RoHS Compliant
Applications
„ Automotive Engine Control
„ Powertrain Management
„ Solenoid and Motor Drivers
„ Electronic Transmission
„ Distributed Power Architecture and VRMs
„ Primary Switch for 12V Systems
AD FREE I
D
G
S
©2010 Fairchild Semiconductor Corporation
FDD8445_F085 Rev A (W)
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDD8445_F085 Datasheet

N-Channel PowerTrench MOSFET

No Preview Available !

FDD8445_F085 pdf
Absolute Maximum Ratings Tc = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (VGS=10v) (Note 1)
Continuous (VGS=10v,with RθJA = 52oC/W)
Pulsed
EAS SinglePulseAvalancheEnergy (Note2)
PD
Power Dissipation
Derate above 25oC
TJ, TSTG
Operating and Storage Temperature
Ratings
40
±20
70
15.2
Figure 4
144
79
0.53
-55 to +175
Units
V
V
A
A
mJ
W
W/oC
oC
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient TO-252, lin2 copper pad area
1.9
52
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
Device
FDD8445
FDD8445_F085
Package
TO-252AA
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
VDS = 32V
VGS = 0V
TJ=150°C
VGS = ±20V
40
-
-
-
- -V
- 1 μA
- 250
- ±100 nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
RDS(ON)
Drain to Source On Resistance
VDS = VGS, ID = 250μA
ID = 50A, VGS = 10V
ID = 50A, VGS = 10V,
TJ = 175°C
2 2.8 4
V
- 6.7 8.7
-
12.5 16.3
mΩ
Dynamic Characteristics
CISS
COSS
CRSS
RG
Qg(TOT)
Qg(5)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V,
f = 1MHz
f = 1MHz
VGS = 0 to 10V
VGS = 0 to 5V
VGS = 0 to 2V
VDD = 20V,
ID = 50A
-
-
-
-
-
-
-
-
-
-
3040
295
178
1.7
45
17
5.8
12.5
9.5
10.5
4050
390
270
-
59
22
7.6
-
-
-
pF
pF
pF
Ω
nC
nC
nC
nC
nC
nC
FDD8445_F085 Rev A (W)
2
www.fairchildsemi.com


Part Number FDD8445_F085
Description N-Channel PowerTrench MOSFET
Maker Fairchild Semiconductor
Total Page 7 Pages
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