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Fairchild Semiconductor Electronic Components Datasheet

FDMA1028NZ Datasheet

Dual N-Channel PowerTrench MOSFET

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FDMA1028NZ pdf
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May 2006
FDMA1028NZ
Dual N-Channel PowerTrench® MOSFET
General Description
This device is designed specifically as a single package
solution for dual switching requirements in cellular
handset and other ultra-portable applications. It
features two independent N-Channel MOSFETs with
low on-state resistance for minimum conduction losses.
The MicroFET 2x2 package offers exceptional thermal
performance for its physical size and is well suited to
linear mode applications.
PIN 1
S1 G1 D2
Features
3.7 A, 20V.
RDS(ON) = 68 m@ VGS = 4.5V
RDS(ON) = 86 m@ VGS = 2.5V
Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
RoHS Compliant
D1 D2
D1 G2 S2
MicroFET 2x2
S1 1
G1 2
D2 3
6 D1
5 G2
4 S2
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDS
VGS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
028
FDMA1028NZ
7’’
Ratings
20
±12
3.7
6
1.4
0.7
–55 to +150
Units
V
V
A
W
°C
86 (Single Operation)
173 (Single Operation)
69 (Dual Operation)
151 (Dual Operation)
°C/W
Tape width
8mm
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
FDMA1028NZ Rev B (W)


Fairchild Semiconductor Electronic Components Datasheet

FDMA1028NZ Datasheet

Dual N-Channel PowerTrench MOSFET

No Preview Available !

FDMA1028NZ pdf
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
gFS Forward Transconductance
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
VGS = 0 V,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 16 V, VGS = 0 V
VGS = ± 12 V, VDS = 0 V
VDS = VGS,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 4.5 V, ID = 3.7 A
VGS = 2.5 V, ID = 3.3 A
VGS= 4.5 V, ID = 3.7 A, TJ=125°C
VDS = 10 V, ID = 3.7 A
VDS = 10 V,
f = 1.0 MHz
V GS = 0 V,
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6
VDS = 10 V,
VGS = 4.5 V
ID = 3.7 A,
Min Typ Max Units
20
15
V
mV/°C
1 µA
±10 µA
0.6 1.0 1.5
V
–4 mV/°C
37 68
50 86
53 90
16
m
S
340 pF
80 pF
60 pF
8 16
8 16
14 26
36
46
0.7
1.1
ns
ns
ns
ns
nC
nC
nC
FDMA1028NZ Rev B (W)


Part Number FDMA1028NZ
Description Dual N-Channel PowerTrench MOSFET
Maker Fairchild Semiconductor
Total Page 7 Pages
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