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Fairchild Semiconductor Electronic Components Datasheet

FDMC86102 Datasheet

N-Channel Power Trench MOSFET

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FDMC86102 pdf
March 2012
FDMC86102
N-Channel Power Trench® MOSFET
100 V, 20 A, 24 mΩ
Features
General Description
„ Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 7 A
„ Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 5 A
„ Low Profile - 1 mm max in Power 33
„ 100% UIL Tested
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
„ DC - DC Conversion
Top Bottom
S Pin 1
S
S
G
D
D
D
D
Power 33
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
100
±20
20
29
7
30
72
41
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3
53
°C/W
Device Marking
FDMC86102
Device
FDMC86102
Package
Power 33
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMC86102 Rev.C1
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/


Fairchild Semiconductor Electronic Components Datasheet

FDMC86102 Datasheet

N-Channel Power Trench MOSFET

No Preview Available !

FDMC86102 pdf
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 80 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 7 A
VGS = 6 V, ID = 5 A
VGS = 10 V, ID = 7 A, TJ = 125 °C
VDD = 10 V, ID = 7 A
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 50 V, VGS = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
VDD = 50 V, ID = 7 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 5 V VDD = 50 V
ID = 7 A
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 7 A
VGS = 0 V, IS = 2 A
(Note 2)
(Note 2)
IF = 7 A, di/dt = 100 A/μs
Min
100
2.0
Typ
69
3.1
-9
19.4
26.8
32.8
19
725
175
15
0.5
8
4
14
4
13
8
3.7
3.6
0.81
0.75
44
40
Max Units
V
mV/°C
1
±100
μA
nA
4.0 V
mV/°C
24
38 mΩ
41
S
965 pF
235 pF
25 pF
Ω
17 ns
10 ns
25 ns
10 ns
18 nC
11 nC
nC
nC
1.3
V
1.2
70 ns
65 nC
NOTES:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 53 °C/W when mounted on a
1 in2 pad of 2 oz copper
b. 125 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. Starting TJ = 25 oC; N-ch: L = 1 mH, IAS = 12 A, VDD = 90 V, VGS = 10 V.
FDMC86102 Rev.C1
2
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/


Part Number FDMC86102
Description N-Channel Power Trench MOSFET
Maker Fairchild Semiconductor
Total Page 7 Pages
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