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Fairchild Semiconductor Electronic Components Datasheet

FDMC86102LZ Datasheet

N-Channel Power Trench MOSFET

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FDMC86102LZ pdf
April 2011
FDMC86102LZ
N-Channel Power Trench® MOSFET
100 V, 22 A, 24 mΩ
Features
General Description
„ Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 6.5 A
„ Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 5.5 A
„ HBM ESD protection level > 6 KV typical (Note 4)
„ 100% UIL Tested
„ RoHS Compliant
This N-Channel logic Level MOSFETs are produced using
Fairchild Semiconductor‘s advanced Power Trench® process
that has been special tailored to minimize the on-state
resistance and yet maintain superior switching performance.
G-S zener has been added to enhance ESD voltage level.
Application
„ DC - DC Switching
Top Bottom
Pin 1
S SG
S
MLP 3.3x3.3
DD
D
D
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
100
±20
22
29
7
30
84
41
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3
53
°C/W
Device Marking
FDMC86102Z
Device
FDMC86102LZ
Package
Power 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
FDMC86102LZ Rev. C
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/


Fairchild Semiconductor Electronic Components Datasheet

FDMC86102LZ Datasheet

N-Channel Power Trench MOSFET

No Preview Available !

FDMC86102LZ pdf
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 80 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
100 V
71 mV/°C
1 μA
±10 μA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
1.0 1.6 2.2 V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
-6 mV/°C
VGS = 10 V, ID = 6.5 A
19 24
rDS(on)
Static Drain to Source On Resistance
VGS = 4.5 V, ID = 5.5 A
25 35 mΩ
VGS = 10 V, ID = 6.5 A, TJ = 125 °C
31 40
gFS Forward Transconductance
VDS = 5 V, ID = 6.5 A
24 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 50 V, VGS = 0 V,
f = 1 MHz
969 1290 pF
181 240 pF
9 15 pF
0.4 Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
VDD = 50 V, ID = 6.5 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V
VDD = 50 V,
ID = 6.5 A
7.1
2.3
19
2.5
15.3
7.6
2.4
2.5
15
10
35
10
22
11
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 6.5 A
VGS = 0 V, IS = 2 A
(Note 2)
(Note 2)
0.80 1.3
0.72 1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 6.5 A, di/dt = 100 A/μs
42 67 ns
40 64 nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 53 °C/W when mounted on a
1 in2 pad of 2 oz copper
b. 125 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C; N-ch: L = 1 mH, IAS = 13 A, VDD = 90 V, VGS = 10 V.
4. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
©2011 Fairchild Semiconductor Corporation
FDMC86102LZ Rev. C
2
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/


Part Number FDMC86102LZ
Description N-Channel Power Trench MOSFET
Maker Fairchild Semiconductor
Total Page 7 Pages
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