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Fairchild Semiconductor Electronic Components Datasheet

FDMS7560S Datasheet

N-Channel PowerTrench SyncFET

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FDMS7560S pdf
FDMS7560S
N-Channel PowerTrench® SyncFETTM
25 V, 49 A, 1.45 mΩ
Features
General Description
August 2011
„ Max rDS(on) = 1.45 mΩ at VGS = 10 V, ID = 30 A
„ Max rDS(on) = 2.1 mΩ at VGS = 4.5 V, ID = 26 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
„ SyncFET Schottky Body Diode
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
The FDMS7560S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
„ Synchronous Rectifier for Synchronous Buck Converters
„ Notebook
„ Server
„ Telecom
„ High Efficiency DC-DC Switch Mode Power Supplies
Top
Bottom
Pin 1
S
SSG
D5
D6
4G
3S
Power 56
DDDD
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
D7
D8
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
2S
1S
Ratings
25
±20
49
181
30
180
220
89
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.4
50
°C/W
Device Marking
FDMS7560S
Device
FDMS7560S
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
FDMS7560S Rev.C1
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/


Fairchild Semiconductor Electronic Components Datasheet

FDMS7560S Datasheet

N-Channel PowerTrench SyncFET

No Preview Available !

FDMS7560S pdf
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current, Forward
ID = 1 mA, VGS = 0 V
ID = 10 mA, referenced to 25 °C
VDS = 20 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
25
V
21 mV/°C
500 μA
100 nA
On Characteristics (Note 2)
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 1 mA
ID = 10 mA, referenced to 25 °C
VGS = 10 V, ID = 30 A
VGS = 4.5 V, ID = 26 A
VGS = 10 V, ID = 30 A, TJ = 125 °C
VDS = 5 V, ID = 30 A
1.2
1.7 3.0
V
-5 mV/°C
1.2 1.45
1.6 2.1 mΩ
1.6 2.0
171 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 13 V, VGS = 0 V,
f = 1 MHz
4470
1200
244
0.8
5945
1560
370
1.8
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 13 V, ID = 30 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 13 V,
ID = 30 A
16
7.4
41
4.8
66
30
13.4
7.5
29
15
66
10
93
43
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2 A
VGS = 0 V, IS = 30 A
(Note 2)
(Note 2)
0.40 0.7
0.76 1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 30 A, di/dt = 300 A/μs
35 56 ns
39 63 nC
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 220 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 21 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 32 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS7560S Rev.C1
2
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/


Part Number FDMS7560S
Description N-Channel PowerTrench SyncFET
Maker Fairchild Semiconductor
Total Page 8 Pages
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