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Fairchild Semiconductor Electronic Components Datasheet

FDMS7570S Datasheet

N-Channel PowerTrench SyncFET

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FDMS7570S pdf
FDMS7570S
N-Channel PowerTrench® SyncFETTM
25 V, 49 A, 1.95 m
December 2009
Features
„ Max rDS(on) = 1.95 mat VGS = 10 V, ID = 28 A
„ Max rDS(on) = 2.85 mat VGS = 4.5 V, ID = 22 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
„ SyncFET Schottky Body Diode
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
General Description
The FDMS7570S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
„ Synchronous Rectifier for Synchronous Buck Converters
„ Notebook
„ Server
„ Telecom
„ High Efficiency DC-DC Switch Mode Power Supplies
Top Bottom
Pin 1
S D5
4G
S
S
G
D6
3S
D
D
D
Power 56
D
D7
D8
2S
1S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
25
±20
49
156
28
180
144
83
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.5
50
°C/W
Device Marking
FDMS7570S
Device
FDMS7570S
©2009 Fairchild Semiconductor Corporation
FDMS7570S Rev.C
Package
Power 56
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
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Fairchild Semiconductor Electronic Components Datasheet

FDMS7570S Datasheet

N-Channel PowerTrench SyncFET

No Preview Available !

FDMS7570S pdf
Electrical Characteristics TA = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current, Forward
ID = 1 mA, VGS = 0 V
ID = 10 mA, referenced to 25 °C
VDS = 20 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
25
V
22 mVC
500 µA
100 nA
On Characteristics (Note 2)
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 1 mA
ID = 10 mA, referenced to 25 °C
VGS = 10 V, ID = 28 A
VGS = 4.5 V, ID = 22 A
VGS = 10 V, ID = 28 A, TJ = 125 °C
VDS = 5 V, ID = 28 A
1.2
1.7 3.0
V
-5 mV/°C
1.6 1.95
2.3 2.85 m
2.4 3.0
170 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 13 V, VGS = 0 V,
f = 1 MHz
3392
912
172
1.2
4515
1215
260
2.1
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 13 V, ID = 28 A,
VGS = 10 V, RGEN = 6
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 13 V,
ID = 28 A
14 25 ns
5.9 12 ns
34 55 ns
4 10 ns
49 69 nC
22 32 nC
9.9 nC
5.3 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2 A
VGS = 0 V, IS = 28 A
(Note 2)
(Note 2)
0.43 0.8
0.78 1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 28 A, di/dt = 300 A/ µs
28 45 ns
27 43 nC
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. EAS of 144 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 17 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 25 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS7570S Rev.C
2
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/


Part Number FDMS7570S
Description N-Channel PowerTrench SyncFET
Maker Fairchild Semiconductor
Total Page 8 Pages
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