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Fairchild Semiconductor Electronic Components Datasheet

FDMS9620S Datasheet

30V Dual N-Channel PowerTrench MOSFET

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FDMS9620S pdf
May 2014
FDMS9620S
Dual N-Channel PowerTrench® MOSFET
Q1: 30V, 16A, 21.5m: Q2: 30V, 18A, 13m:
Features
Q1: N-Channel
„ Max rDS(on) = 21.5m: at VGS = 10V, ID = 7.5A
„ Max rDS(on) = 29.5m: at VGS = 4.5V, ID = 6.5A
Q2: N-Channel
„ Max rDS(on) = 13m: at VGS = 10V, ID = 10A
„ Max rDS(on) = 17m: at VGS = 4.5V, ID = 8.5A
„ Low Qg high side MOSFET
„ Low rDS(on) low side MOSFET
„ Thermally efficient dual Power 56 package
„ Pinout optimized for simple PCB design
„ RoHS Compliant
General Description
This device includes two specialized MOSFETs in a unique dual
Power 56 package. It is designed to provide an optimal
Synchronous Buck power stage in terms of efficiency and PCB
utilization. The low switching loss "High Side" MOSFET is
complemented by a Low Conduction Loss "Low Side" SyncFET.
Applications
Synchronous Buck Converter for:
„ Notebook System Power
„ General Purpose Point of Load
G1
D1
D1
D1 D1
S1/D2
G2
S2
S2
S2
Power 56
S2 5
S2 6
S2 7
G2 8
4 D1
3 D1
2 D1
1 G1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Continuous
-Pulsed
TC = 25°C
TA = 25°C
Power Dissipation for Single Operation
TA = 25°C
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Q1 Q2
30 30
±20 ±20
16 18
7.5 10
60 60
2.5
1
-55 to +150
Units
V
V
A
W
°C
RTJC
RTJA
RTJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
8.2 3.1
50
120
°C/W
Device Marking
FDMS9620S
Device
FDMS9620S
Package
Power 56
Reel Size
13”
Tape Width
12mm
Quantity
3000 units
©2007 Fairchild Semiconductor Corporation
FDMS9620S Rev.D3
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDMS9620S Datasheet

30V Dual N-Channel PowerTrench MOSFET

No Preview Available !

FDMS9620S pdf
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
'BVDSS
'TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250PA, VGS = 0V
ID = 1mA, VGS = 0V
ID = 250PA, referenced to 25°C
ID = 1mA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24V, VGS = 0V
IGSS
Gate to Source Leakage Current
VGS = ±20V, VDS= 0V
Type Min Typ
Q1 30
Q2 30
Q1 23
Q2 23
Q1
Q2
Q1
Q2
Max Units
V
1
500
±100
±100
mV/°C
PA
nA
On Characteristics
VGS(th)
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Drain to Source On Resistance
gFS Forward Transconductance
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
VGS = VDS, ID = 250PA
VGS = VDS, ID = 1mA
ID = 250PA, referenced to 25°C
ID = 1mA, referenced to 25°C
VGS = 10V, ID = 7.5A
VGS = 4.5V, ID = 6.5A
VGS = 10V, ID = 7.5A , TJ = 125°C
VGS = 10V, ID = 10A
VGS = 4.5V, ID = 8.5A
VGS = 10V, ID = 10A , TJ = 125°C
VDD = 10V, ID = 7.5A
VDD = 10V, ID = 10A
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
1
1
1.6 3
1.6 3
V
-4
-4
mV/°C
18 21.5
23 29.5
25 32
m:
9 13
13 17
14 22
25
27
S
VDS = 15V, VGS = 0V, f = 1MHZ
f = 1MHz
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
500 665
700 935
100 135
500 665
65 100
100 150
0.9
1.8
pF
pF
pF
:
Switching Characteristics
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate to Source Gate Charge
Qgd Gate to Drain “Miller” Charge
VDD = 15V, ID = 1A,
VGS = 10V, RGEN = 6:
Q1
VDD = 15V, VGS = 10V ,ID = 7.5A
Q2
VDD = 15V, VGS = 10V ,ID = 10A
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
11
15
20
27
ns
7
13
14
24
ns
23
27
37
44
ns
2.3
7
10
14
ns
10
18
14
25
nC
1.7
2.8
nC
2.0
3.6
nC
©2007 Fairchild Semiconductor Corporation
FDMS9620S Rev.D3
2
www.fairchildsemi.com


Part Number FDMS9620S
Description 30V Dual N-Channel PowerTrench MOSFET
Maker Fairchild Semiconductor
Total Page 9 Pages
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