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Fairchild Semiconductor Electronic Components Datasheet

FDS8449_F085 Datasheet

40V N-Channel PowerTrench MOSFET

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FDS8449_F085 pdf
July 2009
FDS8449_F085
40V N-Channel PowerTrench® MOSFET
General Description
These N-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior switching
performance.
Application
Inverter
Power Supplies
Features
7.6 A, 40V RDS(on) = 29mΩ @ VGS = 10V
RDS(on) = 36mΩ @ VGS = 4.5V
High power handling capability in a widely used
surface mount package
RoHS compliant
Qualified to AEC Q101
DD
DD
DD
DD
SO-8
Pin 1 SO-8 SS SS SS GG
54
63
72
81
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1b)
(Note 1)
Package Marking and Ordering Information
Device Marking
FDS8449
Device
FDS8449_F085
Reel Size
13’’
Ratings
40
±20
7.6
50
2.5
1
–55 to +150
50
125
25
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
©2009 Fairchild Semiconductor Corporation
FDS8449_F085 Rev. A
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDS8449_F085 Datasheet

40V N-Channel PowerTrench MOSFET

No Preview Available !

FDS8449_F085 pdf
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 3)
EAS
Drain-Source Avalanche Energy
VDD = 40 V,
IAS Drain-Source Avalanche Current
ID = 7.3 A, L = 1 mH
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
VGS = 0 V,
ID = 250 μA
ID = 250 μA, Referenced to 25°C
VDS = 32 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
ΔVGS(th)
ΔTJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
VDS = VGS, ID = 250 μA
ID = 250 μA, Referenced to 25°C
VGS = 10 V, ID = 7.6 A
VGS = 4.5 V, ID = 6.8 A
VGS= 10 V, ID = 7.6 A, TJ=125°C
gFS Forward Transconductance
VDS = 10 V, ID = 7.6 A
Dynamic Characteristics
Ciss Input Capacitance
VDS = 20 V, V GS = 0 V,
Coss Output Capacitance
f = 1.0 MHz
Crss Reverse Transfer Capacitance
RG Gate Resistance
f = 1.0 MHz
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
VDD = 20 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
VDS = 20 V,
VGS = 5 V
ID = 7.6 A,
Drain–Source Diode Characteristics
VSD
Drain–Source Diode Forward
Voltage
trr Diode Reverse Recovery Time
Qrr Diode Reverse Recovery Charge
VGS = 0 V,
IF = 7.6 A,
IS = 2.1 A (Note 2)
diF/dt = 100 A/µs
40
1
27 mJ
7.3 A
V
34 mV/°C
1
±100
μA
nA
1.9 3
V
–5 mV/°C
21 29 mΩ
26 36
29 43
21 S
760 pF
100 pF
60 pF
1.2 Ω
9 18 ns
5 10 ns
23 17 ns
3 6 ns
7.7 11 nC
2.4 nC
2.8 nC
0.76 1.2
17
7
V
nS
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°C/W when mounted
on a 1in2 pad of 2 oz
copper
b) 125°C/W when mounted on a
minimum pad.
2 Test: Pulse Width < 300μs, Duty Cycle < 2.0%
3. BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device.
FDS8449_F085 Rev. A
2
Scale 1 : 1 on letter size paper
www.fairchildsemi.com


Part Number FDS8449_F085
Description 40V N-Channel PowerTrench MOSFET
Maker Fairchild Semiconductor
Total Page 6 Pages
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