FQPF19N10 mosfet equivalent, 100v n-channel mosfet.
* 13.6 A, 100 V, RDS(on)=100 mΩ(Max.) @VGS=10 V, ID=6.8 A
* Low Gate Charge (Typ. 19 nC)
* Low Crss (Typ. 32 pF)
* 100% Avalanche Tested
* 175°C Maxim.
Features
* 13.6 A, 100 V, RDS(on)=100 mΩ(Max.) @VGS=10 V, ID=6.8 A
* Low Gate Charge (Typ. 19 nC)
* Low Cr.
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