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Fairchild Semiconductor Electronic Components Datasheet

IRFN214B Datasheet

250V N-Channel MOSFET

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IRFN214B pdf
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IRFN214B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for electronic lamp ballast.
Features
• 0.6A, 250V, RDS(on) = 2.0@VGS = 10 V
• Low gate charge ( typical 8.1 nC)
• Low Crss ( typical 7.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
GDS
TO-92
IRFN Series
D
!
"
!"
G!
"
"
!
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TA = 25°C)
- Continuous (TA = 70°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TL = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJL
RθJA
Parameter
Thermal Resistance, Junction-to-Lead
Thermal Resistance, Junction-to-Ambient
IRFN214B
250
0.6
0.4
2.4
± 30
45
0.6
0.18
4.8
1.8
0.01
-55 to +150
300
Typ Max
-- 70
-- 100
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, May 2004


Fairchild Semiconductor Electronic Components Datasheet

IRFN214B Datasheet

250V N-Channel MOSFET

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IRFN214B pdf
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
250 --
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
ID = 250 µA, Referenced to 25°C -- 0.26
IDSS
Zero Gate Voltage Drain Current
VDS = 250 V, VGS = 0 V
VDS = 200 V, TC = 125°C
-- --
-- --
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
-- --
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
-- --
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 0.3 A
VDS = 40 V, ID = 0.3 A
(Note 4)
2.0
--
--
--
1.49
0.85
4.0
2.0
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 210 275
-- 35
45
-- 7.5
10
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 125 V, ID = 0.5 A,
RG = 25
(Note 4, 5)
VDS = 200 V, ID = 0.5 A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
5.5 21
20 50
31 72
26 62
8.1 10.5
1.0 --
3.7 --
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 0.6
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 2.4
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.6 A
-- -- 1.5
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 0.5 A,
dIF / dt = 100 A/µs
(Note 4)
--
--
77
0.2
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 200mH, IAS = 0.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 2.8A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
µC
©2004 Fairchild Semiconductor Corporation
Rev. A, May 2004


Part Number IRFN214B
Description 250V N-Channel MOSFET
Maker Fairchild Semiconductor
Total Page 8 Pages
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