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Fairchild Semiconductor Electronic Components Datasheet

IRFNL210B Datasheet

200V N-Channel MOSFET

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IRFNL210B pdf
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IRFNL210B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supply and motor control.
Features
• 1.0A, 200V, RDS(on) = 1.5@VGS = 10 V
• Low gate charge ( typical 7.2 nC)
• Low Crss ( typical 6.8 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
GDS
TO-92L
IRFNL Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJL
Parameter
Thermal Resistance, Junction-to-Lead
D
!
"
!"
G!
"
"
!
S
IRFNL210B
200
1.0
0.93
10
± 30
40
3.3
0.031
5.0
3.1
0.025
-55 to +150
300
Typ Max
-- 40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A, December 2002


Fairchild Semiconductor Electronic Components Datasheet

IRFNL210B Datasheet

200V N-Channel MOSFET

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IRFNL210B pdf
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Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 200 V, VGS = 0 V
VDS = 160 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
200
--
--
--
--
--
--
0.2
--
--
--
--
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
2.0 --
VGS = 10 V, ID = 0.5 A
-- 1.16
VDS = 40 V, ID = 1.0 A (Note 4) --
2.4
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 175
-- 30
-- 6.8
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 100 V, ID = 3.3 A,
RG = 25
(Note 4, 5)
VDS = 160 V, ID = 3.3 A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
5.2
35
20
25
7.2
1.3
3.5
--
--
10
100
100
-100
4.0
1.5
--
225
40
9.0
20
80
50
60
9.3
--
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 3.3
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 10
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 3.3 A
-- -- 1.5
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 3.3 A,
-- 106
dIF / dt = 100 A/µs
(Note 4) -- 0.37
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.5mH, IAS = 3.3A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 3.3A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
µC
©2002 Fairchild Semiconductor Corporation
Rev. A, December 2002


Part Number IRFNL210B
Description 200V N-Channel MOSFET
Maker Fairchild Semiconductor
Total Page 8 Pages
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