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Fairchild Semiconductor Electronic Components Datasheet

IRFR110 Datasheet

N-Channel Power MOSFETs

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IRFR110 pdf
Data Sheet
IRFR110, IRFU110
January 2002
4.7A, 100V, 0.540 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. These advanced
power MOSFETs are designed for use in applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate-drive power.
These transistors can be operated directly from integrated
circuits.
Formerly developmental type TA17441.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFU110
TO-251AA
IFU110
IRFR110
TO-252AA
IFR110
NOTE: When ordering, use the entire part number.
Features
• 4.7A, 100V
• rDS(ON) = 0.540
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
JEDEC TO-252AA
GATE
SOURCE
DRAIN (FLANGE)
©2002 Fairchild Semiconductor Corporation
IRFR110, IRFU110 Rev. B


Fairchild Semiconductor Electronic Components Datasheet

IRFR110 Datasheet

N-Channel Power MOSFETs

No Preview Available !

IRFR110 pdf
IRFR110, IRFU110
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Continuous Drain
TC = 100oC . .
Current
.......
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. ID
. ID
Pulsed Drain Current (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Rating (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
IRFR110, IRFU110
100
100
4.7
3.3
17
±20
30
0.2
19
-55 to 175
300
260
UNITS
V
V
A
A
A
V
W
W/oC
mj
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
(Note 4)
BVDSS
VGS(TH)
IDSS
ID(ON)
IGSS
rDS(ON)
ID = 250µA, VGS = 0V (Figure 10)
VGS = VDS, ID = 250µA
VDS = Rated BVDSS, VGS = 0V
VDS
TJ =
= 0.8 x
150oC
Rated
BVDSS
,
VGS
=
0V,
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
VGS = ±20V
ID = 3.3A, VGS = 10V (Figures 8, 9)
Forward Transconductance (Note 4)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
gfs
td(ON)
tr
td(OFF)
tf
Qg(TOT)
Qgs
Qgd
VDS = 50V, IDS = 3.3A (Figure 12)
VDD = 50V, ID 5.6A, RGS = 24, RL = 9.1,
VGS = 10V
MOSFET Switching Times are Essentially Indepen-
dent of Operating Temperature
VGS = 10V, ID 5.6A, VDS = 0.8 x Rated BVDSS,
RL = 14, IG(REF) = 1.5mA (Figure 14)
Gate Charge is Essentially Independent of Operat-
ing Temperature
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
CISS
COSS
CRSS
LD
LS
VGS = 0V, VDS = 25V, f = 1.0MHz
(Figure 11)
Measured from the
Drain Lead, 6mm
(0.25in) from Package
to Center of Die
Measured from The
Source Lead, 6mm
(0.25in) from Header to
Source Bonding Pad
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
LD
G
LS
Junction to Case
Junction to Ambient
RθJC
RθJA
Free Air Operation
S
MIN
100
2
-
-
4.7
-
-
1.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP MAX UNITS
- -V
- 4V
- 25 µA
- 250 µA
--
- ±100
0.41 0.540
A
nA
2.0 -
7.6 11
24 36
14 21
14 21
5.2 7.7
1.5 -
2.2 -
180 -
82 -
15 -
4.5 -
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
7.5 - nH
- 5.0 oC/W
- 110 oC/W
©2002 Fairchild Semiconductor Corporation
IRFR110, IRFU110 Rev. B


Part Number IRFR110
Description N-Channel Power MOSFETs
Maker Fairchild Semiconductor
Total Page 7 Pages
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