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Fairchild Semiconductor Electronic Components Datasheet

L14C2 Datasheet

HERMETIC SILICON PHOTOTRANSISTOR

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L14C2 pdf
HERMETIC SILICON PHOTOTRANSISTOR
PACKAGE DIMENSIONS
0.195 (4.96)
0.178 (4.52)
0.230 (5.84)
0.209 (5.31)
0.030 (0.76)
MAX
0.210 (5.34)
MAX
0.500 (12.7)
MIN
0.100 (2.54) DIA.
0.100 (2.54)
0.050 (1.27)
2
0.038 (.97) NOM
0.046 (1.16)
0.036 (0.92)
13
45°
Ø0.021 (0.53) 3X
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
L14C1 L14C2
SCHEMATIC
(CONNECTED TO CASE)
COLLECTOR
3
BASE 2
1
EMITTER
DESCRIPTION
The L14C1/L14C2 are silicon phototransistors mounted in a wide angle, TO-18 package.
FEATURES
• Hermetically sealed package
• Wide reception angle
2001 Fairchild Semiconductor Corporation
DS300305 6/01/01
1 OF 4
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

L14C2 Datasheet

HERMETIC SILICON PHOTOTRANSISTOR

No Preview Available !

L14C2 pdf
HERMETIC SILICON PHOTOTRANSISTOR
L14C1 L14C2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)(3,4,5 and 6)
Soldering Temperature (Flow)(3,4 and 6)
Collector to Emitter Breakdown Voltage
Collector to Base Breakdown Voltage
Emitter to Base Breakdwon Voltage
Power Dissipation (TA = 25°C)(1)
Power Dissipation (TC = 25°C)(2)
Symbol
TOPR
TSTG
TSOL-I
TSOL-F
VCEO
VCBO
VEBO
PD
PD
Rating
-65 to +125
-65 to +150
240 for 5 sec
260 for 10 sec
50
50
7
300
600
Unit
°C
°C
°C
°C
V
V
V
mW
mW
NOTE:
1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 6.00 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension.
7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm.
8. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of 3.0 mW/cm2 is approximately
equivalent to a tungsten source, at 2870°K, of 10 mW/cm2.
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) (All measurements made under pulse conditions)
PARAMETER
Collector-Emitter Breakdown
Emitter-Base Breakdown
Collector-Base Breakdown
Collector-Emitter Leakage
Reception Angle at 1/2 Sensitivity
On-State Collector Current L14C1
On-State Collector Current L14C2
On-State Collector Current L14C2
Turn-On Time
Turn-Off Time
Saturation Voltage
TEST CONDITIONS
SYMBOL MIN
TYP
MAX
UNITS
IC = 10 mA, Ee = 0
IE = 100 µA, Ee = 0
IC = 100 µA, Ee = 0
VCE = 20 V, Ee = 0
Ee = 0.5 mW/cm2, VCE = 5 V(7,8)
Ee = 0.5 mW/cm2, VCE = 5 V(7,8)
Ee = 1.0 mW/cm2, VCE = 5 V(7,8)
IC = 2 mA, VCC = 10 V, RL =100
IC = 2 mA, VCC = 10 V, RL =100
IC = 0.40 mA, Ee = 6.0 mW/cm2(7,8)
BVCEO
BVEBO
BVCBO
ICEO
θ
IC(ON)
IC(ON)
IC(ON)
ton
toff
VCE(SAT)
50
7.0
50
.16
.08
.16
—V
—V
—V
100 nA
±40 Degrees
— mA
— mA
— mA
5 µs
5 µs
0.40 V
www.fairchildsemi.com
2 OF 4
6/01/01 DS300305


Part Number L14C2
Description HERMETIC SILICON PHOTOTRANSISTOR
Maker Fairchild Semiconductor
Total Page 4 Pages
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