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Fairchild Semiconductor Electronic Components Datasheet

RMPA0966 Datasheet

Power Amplifier Module

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RMPA0966 pdf
PRELIMINARY
November 2005
RMPA0966 i-Lo™
Cellular CDMA, CDMA2000-1X and WCDMA
Power Amplifier Module
Features
42% CDMA/WCDMA efficiency at +28 dBm Pout
21% CDMA/WCDMA efficiency (56 mA total current) at
+16 dBm Pout
Meets HSDPA performance requirements
50% AMPS mode efficiency at +31 dBm Pout
Low quiescent current (Iccq): 15 mA in low-power mode
Single positive-supply operation with low power and
shutdown modes
• 3.4V typical Vcc operation
• Low Vref (2.85V) compatible with advanced handset
chipsets
Compact Lead-free compliant LCC package –
(4.0 X 4.0 x 1.0 mm nominal)
Industry standard pinout
Internally matched to 50 Ohms and DC blocked RF
input/output
Meets IS-95/CDMA2000-1XRTT/WCDMA performance
requirements
Device
General Description
The RMPA0966 Power Amplifier Module (PAM) is Fairchild’s lat-
est innovation in 50 Ohm matched, surface mount modules tar-
geting Cellular CDMA/WCDMA/HSDPA, AMPS and Wireless
Local Loop (WLL) applications. Answering the call for ultra-low
DC power consumption and extended battery life in portable
electronics, the RMPA0966 uses novel proprietary circuitry to
dramatically reduce amplifier current at low to medium RF out-
put power levels (<+16 dBm), where the handset most often
operates. A simple two-state Vmode control is all that is needed
to reduce operating current by more than 60% at 16 dBm output
power, and quiescent current (Iccq) by as much as 70% com-
pared to traditional power-saving methods. No additional cir-
cuitry, such as DC-to-DC converters, are required to achieve
this remarkable improvement in amplifier efficiency. Further, the
4x4x1.0 mm LCC package is pin-compatible and a drop-in
replacement for last generation 4x4 mm PAMs widely used
today, minimizing the design time to apply this performance-
enhancing technology. The multi-stage GaAs Microwave Mono-
lithic Integrated Circuit (MMIC) is manufactured using Fairchild
RF’s InGaP Heterojunction Bipolar Transistor (HBT) process.
Functional Block Diagram
Vref 1
Vmode 2
GND 3
RF IN 4
Vcc1 5
MMIC
(Top View)
BIAS/MODE SWITCH
INPUT
MATCH
10 GND
9 GND
OUTPUT
MATCH
8 RF OUT
7 GND
6 Vcc2
11 (paddle ground on package bottom)
©2005 Fairchild Semiconductor Corporation
RMPA0966 i-Lo™ Rev. A
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

RMPA0966 Datasheet

Power Amplifier Module

No Preview Available !

RMPA0966 pdf
Absolute Maximum Ratings1
Symbol
Parameter
Value
Vcc1, Vcc2
Vref
Vmode
Pin
Tstg
Supply Voltages
Reference Voltage
Power Control Voltage
RF Input Power
Storage Temperature
5.0
2.6 to 3.5
3.5
+10
-55 to +150
Note:
1. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.
Units
V
V
V
dBm
°C
Electrical Characteristics1
Symbol
Parameter
Min Typ
Max Units
Comments
f Operating Frequency
CDMA/WCDMA Operation
Gp Power Gain
Po Linear Output Power
PAEd
Itot
CDMA
ACPR1
PAEd (digital) @ +28dBm
PAEd (digital) @ +16dBm
High Power Total Current
Low Power Total Current
Adjacent Channel Power Ratio
±885KHz Offset
ACPR2 ±1.98MHz Offset
WCDMA Adjacent Channel Leakage Ratio
ACLR1 ±5MHz Offset
ACLR2 ±10MHz Offset
AMPS Operation
Gp Power Gain
PAEa Power-Added Efficiency (analog)
General Characteristics
VSWR Input Impedance
NF Noise Figure
Rx No
2fo-5fo
S
Receive Band Noise Power
Harmonic Suppression3
Spurious Outputs2,3
Ruggedness w/ Load Mismatch3
Tc Case Operating Temperature
DC Characteristics
Iccq Quiescent Current
Iref Reference Current
Icc(off) Shutdown Leakage Current
824
28
16
-30
30
20
42
21
440
56
-50
-55
-60
-65
-40
-45
-53
-60
29
50
2.0:1
4
-134
15
2
1
849
2.5:1
-30
-60
10:1
85
5
MHz
dB
dB
dBm
dBm
%
%
mA
mA
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
Po=+28 dBm; Vmode=0V
Po=+16 dBm; Vmode2.0V
Vmode=0V
Vmode2.0V
Vmode=0V
Vmode2.0V
Po=+28 dBm, Vmode=0V
Po=+16 dBm, Vmode2.0V
IS-95 A/B Modulation
Po=+28 dBm; Vmode=0V
Po=+16 dBm; Vmode2.0V
Po=+28 dBm; Vmode=0V
Po=+16 dBm; Vmode2.0V
WCDMA Modulation 3GPP
3.2 03-00 DPCCH +1 DCDCH
Po=+28 dBm; Vmode=0V
Po=+16 dBm; Vmode2.0V
Po=+28 dBm; Vmode=0V
Po=+16 dBm; Vmode2.0V
dB Po=+31 dBm
% Po=+31 dBm
dB
dBm/Hz
dBc
dBc
°C
Po+28 dBm; 869 to 894MHz
Po+28 dBm
Load VSWR5.0:1
No permanent damage.
mA Vmode2.0V
mA Po+28 dBm
µA No applied RF signal
Notes:
1. All parameters met at Tc = +25°C, Vcc = +3.4V, Vref = 2.85V and load VSWR 1.2:1, unless otherwise noted.
2. All phase angles.
3. Guaranteed by design.
RMPA0966 i-Lo™ Rev. A
2
www.fairchildsemi.com


Part Number RMPA0966
Description Power Amplifier Module
Maker Fairchild Semiconductor
Total Page 7 Pages
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