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Fairchild Semiconductor Electronic Components Datasheet

RMPA0967 Datasheet

Power Edg TM Power Amplifier Module

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RMPA0967 pdf
March 2006
RMPA0967
Cellular CDMA, CDMA2000-1X and WCDMA
Power Edge™ Power Amplifier Module
Features
Single positive-supply operation with low power and shut-
down modes
39% CDMA/WCDMA efficiency at +28 dBm average output
power
52% AMPS mode efficiency at +31 dBm output power
Lead-free RoHS compliant 3 x 3 x 1mm leadless package
Internally matched to 50 Ohms and DC blocked RF
input/output
Meets CDMA2000-1XRTT/WCDMA performance
requirements
Meets HSDPA performance requirements
Alternative pin-out to Fairchild RMPA0965
General Description
The RMPA0967 power amplifier module (PAM) is designed for
cellular band AMPS, CDMA, CDMA2000-1X, WCDMA and
HSDPA applications. The 2 stage PAM is internally matched to
50 Ohms to minimize the use of external components and fea-
tures a low-power mode to reduce standby current and DC
power consumption during peak phone usage. High power-
added efficiency and excellent linearity are achieved using Fair-
child RF’s InGaP Heterojunction Bipolar Transistor (HBT) pro-
cess.
Device
Functional Block Diagram
(Top View)
Vref 1
Vmode 2
RF IN 3
Vcc1 4
MMIC
DC Bias Control
Input
Match
8 GND
Output
Match
7 RF OUT
6 GND
5 Vcc2
©2006 Fairchild Semiconductor Corporation
RMPA0967 Rev. G
(paddle ground on
package bottom)
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

RMPA0967 Datasheet

Power Edg TM Power Amplifier Module

No Preview Available !

RMPA0967 pdf
Absolute Ratings1
Parameter
Symbol
Value
Units
Supply Voltages
Reference Voltage
Power Control Voltage
RF Input Power
Storage Temperature
Vcc1, Vcc2
Vref
Vmode
Pin
Tstg
5.0
2.6 to 3.5
3.5
+10
-55 to +150
V
V
V
dBm
°C
Note:
1. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.
Electrical Characteristics1
Parameter
Symbol Min Typ Max Units Comments
Operating Frequency C
CDMA Operation
Small-Signal Gain
Power Gain
Linear Output Power
PAEd (digital) @ +28dBm
PAEd (digital) @ +16dBm
PAEd (digital) @ +16dBm
High Power Total Current
Low Power Total Current
Adjacent Channel Power Ratio
±885KHz Offset
±1.98MHz Offset
AMPS Operation
Gain
Power-Added Efficiency (analog)
General Characteristics
Input Impedance
Noise Figure
Receive Band Noise Power
Harmonic Suppression3
Spurious Outputs2, 3
Ruggedness w/ Load Mismatch3
Case Operating Temperature
DC Characteristics
Quiescent Current
Reference Current
Shutdown Leakage Current
f 824
849 MHz
SSg
Gp
Po
PAEd
Itot
28
29
27
28
16
39
9
18
480
130
ACPR1
ACPR2
-50
-52
-60
-70
dB
dB
dB
dBm
dBm
%
%
%
mA
mA
dBc
dBc
dBc
dBc
Po = 0dBm
Po = +28dBm; Vmode = 0V
Po = +16dBm; Vmode 2.0V
Vmode = 0V
Vmode 2.0V
Vmode = 0V
Vmode 2.0V
Vmode 2.0V, Vcc = 1.5V
Po = +28dBm, Vmode = 0V
Po = +16dBm, Vmode 2.0V
IS-95 A/B Modulation
Po = +28dBm; Vmode = 0V
Po = +16dBm; Vmode 2.0V
Po = +28dBm; Vmode = 0V
Po = +16dBm; Vmode 2.0V
Gp
PAEa
28
52
Po = +31dBm
% Po = +31dBm
VSWR
NF
Rx No
2fo-5fo
S
Tc
2.0:1 2.5:1
4 dB
-137
dBm/Hz Po +28dBm; 869 to 894MHz
-30 dBc Po +28dBm
-60 dBc Load VSWR < 5.0:1
10:1 No permanent damage.
-30 85 °C
Iccq
Iref
Icc(off)
60
58
15
mA Vmode 2.0V
mA Po +28dBm
µA No applied RF signal.
Notes:
1. All parameters met at Tc = +25°C, Vcc = +3.4V, Freq = 836.5MHz, Vref = 2.85V and load VSWR O 1.2:1, unless
otherwise noted.
2. All phase angles.
3. Guaranteed by design.
RMPA0967 Rev. G
2 www.fairchildsemi.com


Part Number RMPA0967
Description Power Edg TM Power Amplifier Module
Maker Fairchild Semiconductor
Total Page 8 Pages
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