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Fairchild Semiconductor Electronic Components Datasheet

RMPA1963 Datasheet

CDMA2000-1X and WCDMA Power Amplifier Module

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RMPA1963 pdf
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PRELIMINARY
May 2005
RMPA1963 i-Lo™
US-PCS CDMA, CDMA2000-1X and WCDMA
Power Amplifier Module
Features
38% CDMA/WCDMA efficiency at +28 dBm Pout
14% CDMA/WCDMA efficiency (85 mA total current) at
+16 dBm Pout
Meets HSDPA performance requirements
Linear operation in low-power mode up to +19 dBm
Low quiescent current (Iccq): 25 mA in low-power mode
Single positive-supply operation with low power and shut-
down modes
• 3.4V typical Vcc operation
• Low Vref (2.85V) compatible with advanced handset
chipsets
Compact Lead-free compliant LCC package –
(4.0 X 4.0 x 1.5 mm nominal)
Industry standard pinout
Internally matched to 50 Ohms and DC blocked RF
input/output
Meets IS-95/CDMA2000-1XRTT/WCDMA performance
requirements
General Description
The RMPA1963 Power Amplifier Module (PAM) is Fairchild’s lat-
est innovation in 50 Ohm matched, surface mount modules tar-
geting US-PCS CDMA/WCDMA/HSDPA and Wireless Local
Loop (WLL) applications. Answering the call for ultra-low DC
power consumption and extended battery life in portable elec-
tronics, the RMPA1963 uses novel proprietary circuitry to dra-
matically reduce amplifier current at low to medium RF output
power levels (< +16 dBm), where the handset most often oper-
ates. A simple two-state Vmode control is all that is needed to
reduce operating current by more than 50% at 16 dBm output
power, and quiescent current (Iccq) by as much as 70% com-
pared to traditional power-saving methods. No additional cir-
cuitry, such as DC-to-DC converters, are required to achieve
this remarkable improvement in amplifier efficiency. Further, the
4x4x1.5 mm LCC package is pin-compatible and a drop-in
replacement for last generation 4x4 mm PAMs widely used
today, minimizing the design time to apply this performance-
enhancing technology. The multi-stage GaAs Microwave Mono-
lithic Integrated Circuit (MMIC) is manufactured using Fairchild
RF’s InGaP Heterojunction Bipolar Transistor (HBT) process.
Device
i-L
o
Functional Block Diagram
(Top View)
Vcc1 1
RF IN 2
GND 3
Vmode 4
Vref 5
MMIC
INPUT
MATCH
BIAS/MODE SWITCH
10 Vcc2
OUTPUT
MATCH
9 GND
8 RF OUT
7 GND
6 GND
11 (paddle ground on package bottom)
©2005 Fairchild Semiconductor Corporation
RMPA1963 i-Lo™ Rev. H
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

RMPA1963 Datasheet

CDMA2000-1X and WCDMA Power Amplifier Module

No Preview Available !

RMPA1963 pdf
Absolute Maximum Ratings1
Symbol
Parameter
Value
Vcc1, Vcc2
Vref
Vmode
Pin
Tstg
Supply Voltages
Reference Voltage
Power Control Voltage
RF Input Power
Storage Temperature
5.0
2.6 to 3.5
3.5
+10
-55 to +150
Note:
1. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.
Units
V
V
V
dBm
°C
Electrical Characteristics1
Symbol
Parameter
f Operating Frequency
CDMA/WCDMA Operation
Gp Power Gain
Po Linear Output Power
PAEd
Itot
CDMA
ACPR1
PAEd (digital) @ +28dBm
PAEd (digital) @ +16dBm
High Power Total Current
Low Power Total Current
Adjacent Channel Power Ratio
±1.25MHz Offset
ACPR2 ±2.25MHz Offset
WCDMA Adjacent Channel Leakage Ratio
ACLR1 ±5.00MHz Offset
ACLR2 ±10.00MHz Offset
General Characteristics
VSWR Input Impedance
NF Noise Figure
Rx No Receive Band Noise Power
2fo Harmonic Suppression
3fo-5fo
S
Harmonic Suppression
Spurious Outputs2,3
Ruggedness w/ Load Mismatch3
Tc Case Operating Temperature
DC Characteristics
Iccq Quiescent Current
Iref Reference Current
Icc(off) Shutdown Leakage Current
Min
1850
28
16
-30
Typ
28
23
39
13
470
85
-50
-55
-60
-65
-40
-43
-53
-55
2.0:1
4
-139
-40
-55
25
7
1
Max
1910
2.5:1
-60
10:1
85
5
Units
MHz
Comments
dB
dB
dBm
dBm
%
%
mA
mA
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
Po=+28dBm; Vmode=0V
Po=+16dBm; Vmode2.0V
Vmode=0V
Vmode2.0V
Vmode=0V
Vmode2.0V
Po=+28dBm, Vmode=0V
Po=+16dBm, Vmode2.0V
IS-95 A/B Modulation
Po=+28dBm; Vmode=0V
Po=+16dBm; Vmode2.0V
Po=+28dBm; Vmode=0V
Po=+16dBm; Vmode2.0V
WCDMA Modulation 3GPP
3.2 03-00 DPCCH +1 DCDCH
Po=+28dBm; Vmode=0V
Po=+16dBm; Vmode2.0V
Po=+28dBm; Vmode=0V
Po=+16dBm; Vmode2.0V
dB
dBm/Hz
dBc
dBc
dBc
°C
Po+28dBm;
1930 to 1990MHz
Po+28dBm
Po+28dBm
Load VSWR 5.0:1
No permanent damage.
mA Vmode2.0V
mA Po+28dBm
µA No applied RF signal
Notes:
1. All parameters met at Tc = +25°C, Vcc = +3.4V, Vref = 2.85V and load VSWR 1.2:1, unless otherwise noted.
2. All phase angles.
3. Guaranteed by design.
i-L
o
RMPA1963 i-Lo™ Rev. H
2
www.fairchildsemi.com


Part Number RMPA1963
Description CDMA2000-1X and WCDMA Power Amplifier Module
Maker Fairchild Semiconductor
Total Page 7 Pages
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