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Fairchild Semiconductor Electronic Components Datasheet

SFU2955 Datasheet

Advanced Power MOSFET

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SFU2955 pdf
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Advanced Power MOSFET
SFR/U2955
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 µA (Max.) @ VDS = -60V
Lower RDS(ON) : 0.22 (Typ.)
BVDSS = -60 V
RDS(on) = 0.3
ID = -7.6 A
D-PAK I-PAK
2
11
3
2
3
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25oC)
Continuous Drain Current (TC=100oC)
Drain Current-Pulsed
Gate-to-Source Voltage
O1
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
O2
O1
O1
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25oC) *
Total Power Dissipation (TC=25oC)
Linear Derating Factor
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8”from case for 5-seconds
1. Gate 2. Drain 3. Source
Value
-60
-7.6
-5.4
30
+_ 20
99
-7.6
3.2
-5.5
2.5
32
0.26
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/oC
oC
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
--
--
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
3.91
50
110
Units
oC/W
Rev. B
©1999 Fairchild Semiconductor Corporation


Fairchild Semiconductor Electronic Components Datasheet

SFU2955 Datasheet

Advanced Power MOSFET

No Preview Available !

SFU2955 pdf
SFR/U2955
P-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol
BVDSS
BV/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-60 -- -- V
-- -0.04 -- V/oC
-2.0 -- -4.0 V
-- -- -100 nA
-- -- 100
-- -- -10
-- -- -100 µA
-- -- 0.3
-- 3.6 --
-- 465 600
-- 140 215 pF
-- 40 60
VGS=0V,ID=-250µA
ID=-250µA See Fig 7
VDS=-5V,ID=-250µA
VGS=-20V
VGS=20V
VDS=-60V
VDS=-48V,TC=125oC
O4
VGS=-10V,ID=-3.8A
VDS=-30V,ID=-3.8A
O4
VGS=0V,VDS=-25V,f =1MHz
See Fig 5
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 11 30
-- 21 50
VDD=-30V,ID=-9.4A,
-- 29 65 ns RG=18
-- 20 50
See Fig 13 O4 O5
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
-- 15 19
VDS=-48V,VGS=-10V,
-- 2.9 -- nC ID=-9.4A
-- 6.0 --
See Fig 6 & Fig 12 O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- -7.6
Integral reverse pn-diode
A
-- -30
in the MOSFET
O4 -- -- -3.8 V TJ=25oC,IS=-7.6A,VGS=0V
-- 80 -- ns TJ=25oC,IF=-9.4A
-- 0.22 -- µC diF/dt=100A/µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=2.0mH, IAS=-7.6A, VDD=-25V, RG=27*, Starting TJ =25oC
O3 ISD <_ -9.4A, di/dt <_ 250A/ µs, VDD <_ BVDSS , Starting TJ =25oC
O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_ 2%
O5 Essentially Independent of Operating Temperature


Part Number SFU2955
Description Advanced Power MOSFET
Maker Fairchild Semiconductor
Total Page 7 Pages
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