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Fairchild Semiconductor Electronic Components Datasheet

SSP3N90A Datasheet

Advanced Power MOSFET

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SSP3N90A pdf
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Advanced Power MOSFET
SSP3N90A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 µA (Max.) @ VDS = 900V
Low RDS(ON) : 4.679 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 ΟC)
Continuous Drain Current (TC=100 ΟC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25 ΟC)
Linear Derating Factor
O2
O1
O1
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8“from case for 5-seconds
Thermal Resistance
Symbol
R θJC
R θCS
R θJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
BVDSS = 900 V
RDS(on) = 6.2
ID = 3 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Value
900
3
1.9
12
+_ 30
286
3
10
1.5
100
0.8
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/ ΟC
ΟC
Typ.
--
0.5
--
Max.
1.25
--
62.5
Units
ΟC /W
Rev. B
©1999 Fairchild Semiconductor Corporation


Fairchild Semiconductor Electronic Components Datasheet

SSP3N90A Datasheet

Advanced Power MOSFET

No Preview Available !

SSP3N90A pdf
SSP3N90A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25 ΟC unless otherwise specified)
Symbol
BVDSS
BV/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
900 -- -- V VGS=0V,ID=250µA
-- 1.13 -- V/ ΟC ID=250µA See Fig 7
2.0 -- 3.5 V VDS=5V,ID=250µA
-- -- 100 nA VGS=30V
-- -- -100
VGS=-30V
-- -- 25
VDS=900V
-- -- 250 µA VDS=720V,TC=125 ΟC
-- -- 6.2 VGS=10V,ID=1.5A
O4 *
-- 2.19 -- VDS=50V,ID=1.5A
O4
-- 590 770
--
55
65
VGS=0V,VDS=25V,f =1MHz
pF
See Fig 5
-- 22 28
-- 16 40
-- 26 60
VDD=450V,ID=3A,
-- 47 105 ns RG=16
See Fig 13
O4 O5
-- 24 60
Total Gate Charge
Gate-Source Charge
Gate-Drain( “Miller” ) Charge
-- 28 37
-- 5.5 --
-- 11.9 --
VDS=720V,VGS=10V,
nC ID=3A
See Fig 6 & Fig 12 O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- 3
-- 12
Integral reverse pn-diode
A
in the MOSFET
O4 -- -- 1.4 V TJ=25ΟC ,IS=3A,VGS=0V
-- 380 -- ns TJ=25ΟC ,IF=3A
-- 1.9 -- µC diF/dt=100A/µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=60mH, IAS=3A, VDD=50V, RG=27, Starting TJ =25 ΟC
O3 ISD <_ 3A, di/dt <_90A/ µs, VDD<_ BVDSS , Starting TJ =25 ΟC
O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_ 2%
O5 Essentially Independent of Operating Temperature


Part Number SSP3N90A
Description Advanced Power MOSFET
Maker Fairchild Semiconductor
Total Page 7 Pages
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