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DTC110 Datasheet

Bias Resistor Transistor

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SEMICONDUCTOR

TECHNICAL DATA

DTC 101 ~ 108

DTC 110 ~ 112 / 114 /117

DTC 123 / 124

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space. The device is housed in the SOT-23

package which is designed for low power surface mount applications.

• Simplifies Circuit Design

• Reduces Board Space and Component Count

• The SOT-23 package can be soldered using wave or reflow. The

modified gull-winged leads absorb thermal stress during soldering

eliminating the possibility of damage to the die.

MAXIMUM RATINGS (TA = 25 C unless otherwise noted)

Rating

Symbol Value

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Collector Current

IC 100

Total Power Dissipation @ TA = 25 C

(Note 1.) Derate above 25 C

PD 246

1.5

Unit

Vdc

mAdc

C/W

SOT–23 (TO–236AB)

PIN 1

BASE

(INPUT)

PIN 3

COLLECTOR

(OUTPUT)

PIN 2

EMITTER

(GROUND)

DEVICE MARKING AND RESISTOR VALUES

DTC101

Device

Marking

A8J

R1(K)

4.7

R2(K)

4.7

DTC102

A8A 10 10

DTC103

A8B 22 22

DTC104

A8C 47 47

DTC105

A8M 2.2 47

DTC106

A8K 4.7 47

DTC107

A8D 10 47

DTC108

A8L 22 47

DTC110

A8F 4.7 ∞

DTC111

A8E 10 ∞

DTC112

DTC114

A8U 100 ∞

A8T 47 ∞

DTC117

A8H 2.2 2.2

DTC123

A8G 1.0 1.0

DTC124

A8R 2.2 ∞

1. Device mounted on a FR-4 glass epoxy printed circuit board using the

minimum recommended footprint.

Shipping

3000/Tape & Reel

2008. 8. 28

Revision No : 1

1/16

First Silicon

DTC110 Datasheet Preview

DTC110 Datasheet

Bias Resistor Transistor

No Preview Available !

DTC 101 ~ 108, DTC 110 ~ 112 / 114 /117, DTC 123 / 124

THERMAL CHARACTERISTICS

Rating

Thermal Resistance – Junction-to-Ambient (Note 1.)

Operating and Storage Temperature Range

Maximum Temperature for Soldering Purposes,

Time in Solder Bath

Symbol

RθJA

TJ, Tstg

ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)

Characteristic

Symbol

OFF CHARACTERISTICS

Collector-Base Cutoff Current (VCB= 50 V, IE = 0)

Collector-Emitter Cutoff Current (VCE= 50 V, IB = 0)

Emitter-Base Cutoff Current

(VEB= 6.0 V, IC=0)

DTC101

DTC102

DTC103

DTC104

DTC105

DTC106

DTC107

DTC108

DTC110

DTC111

DTC112

DTC114

DTC117

DTC123

DTC124

Collector-Base Breakdown Voltage (IC = 10µA, IE = 0)

Collector-Emitter Breakdown Voltage (Note 2.), (IC = 2.0 mA, IB = 0)

ON CHARACTERISTICS

ICBO

ICEO

IEBO

V(BR)CBO

V(BR)CEO

DC Current Gain

(VCE= 10 V, IC=5.0mA)

DTC101

DTC102

DTC103

DTC104

DTC105

DTC106

DTC107

DTC108

DTC110

DTC111

DTC112

DTC114

DTC117

DTC123

DTC124

Collector-Emitter Saturation Voltage (IC= 10 mA, IB = 0.3 mA)

(IC = 10 mA, IB = 5 mA)

DTC117 / DTC123

(IC = 10 mA, IB = 1 mA)

DTC101 / DTC105 /

DTC106 / DTC108 / DTC111 /

DTC114 / DTC110 / DTC124

hFE

VCE(sat)

Min

–

160

8.0

3.0

160

–

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

Value

508

–55 to +150

260

Typ

–

100

140

200

140

150

350

5.0

350

–

Unit

C/W

Sec

Max Unit

100 nAdc

500 nAdc

1.5 mAdc

0.5

0.2

0.1

0.2

0.18

0.2

0.13

1.9

0.9

0.1

0.2

2.3

4.3

4.0

– Vdc

–

0.25 Vdc

2008. 8. 28

Revision No : 1

2/16

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Bias Resistor Transistor

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Bias Resistor Transistor

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