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AO3413 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

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AO3413 pdf
AO3413
P-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO3413 uses advanced trench technology toprovide excellent RDS(ON) , low gate charge and
operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM
applications.
Features
VDS (V) = -20V
ID = -3 A
RDS(ON) < 97m(VGS = -4.5V)
RDS(ON) < 130m(VGS = -2.5V)
RDS(ON) < 190m(VGS = -1.8V)
TO-236
(SOT-23)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-20
±8
-3
-2.4
-15
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/6
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Freescale Semiconductor Electronic Components Datasheet

AO3413 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

AO3413 pdf
AO3413
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS
IDSS
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V
VDS=-16V, VGS=0V
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±8V
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-3A
Static Drain-Source On-Resistance
VGS=-2.5V, ID=-2.6A
VGS=-1.8V, ID=-1A
Forward Transconductance
VDS=-5V, ID=-3A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Gate Source Charge
VGS=-4.5V, VDS=-10V, ID=-3A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=-4.5V, VDS=-10V, RL=3.3,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=-3A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/µs
Min
-20
-0.3
-15
4
Typ Max Units
-0.55
-1
-5
±100
-1
81
111
108
146
7
-0.78
97
135
130
190
-1
-2
V
µA
nA
V
A
m
m
m
S
V
A
540 pF
72 pF
49 pF
12
6.1 nC
0.6 nC
1.6 nC
10 ns
12 ns
44 ns
22 ns
21 ns
7.5 nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
2/6
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Part Number AO3413
Description P-Channel Enhancement Mode Field Effect Transistor
Maker Freescale
Total Page 6 Pages
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