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AO3416 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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AO3416 pdf
AO3416, AO3416L
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO3416 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and
operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM
applications. It is ESD protected. AO3416L ( Green Product ) is offered in a lead-free package.
Features
VDS (V) = 20V
ID = 6.5 A
RDS(ON) < 22m(VGS = 4.5V)
RDS(ON) < 26m(VGS = 2.5V)
RDS(ON) < 34m(VGS = 1.8V)
ESD Rating: 2000V HBM
TO-236
(SOT-23)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
20
±8
6.5
5.2
30
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
65
85
43
Max
90
125
60
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/4
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Freescale Semiconductor Electronic Components Datasheet

AO3416 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

AO3416 pdf
AO3416. AO3416L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=16V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±4.5V
VDS=0V, VGS=±8V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=4.5V, ID=6.5A
Static Drain-Source On-Resistance
VGS=2.5V, ID=5.5A
VGS=1.8V, ID=5A
Forward Transconductance
VDS=5V, ID=6.5A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=4.5V, VDS=10V, ID=6.5A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=5V, VDS=10V, RL=1.5,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=6.5A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=6.5A, dI/dt=100A/µs
Min
20
0.4
30
Typ
0.6
18
25
21
26
29
0.76
1160
187
146
1.5
16
0.8
3.8
6.2
12.7
51.7
16
17.7
6.7
Max Units
V
1
5
µA
±1 µA
±10 µA
1V
A
22
30
m
26 m
34 m
S
1V
2.5 A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2/4
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Part Number AO3416
Description N-Channel Enhancement Mode Field Effect Transistor
Maker Freescale
Total Page 4 Pages
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