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AO4450 Datasheet

40V N-Channel MOSFET

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AO4450 pdf
AO4450
40V N-Channel MOSFET
General Description
The AO4450 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate
charge. This device is suitable for use as a load switch or in PWM applications.
Features
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
40V
7A
< 30m
< 38m
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
ID
IDM
IAS
EAS
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
40
±20
7
5.5
45
14
10
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
31
59
16
Max
40
75
24
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
1/5
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Freescale Semiconductor Electronic Components Datasheet

AO4450 Datasheet

40V N-Channel MOSFET

No Preview Available !

AO4450 pdf
AO4450
40V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=40V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=7A
VGS=4.5V, ID=5A
Forward Transconductance
VDS=5V, ID=7A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
40
1.7
45
V
1
µA
5
±100 nA
2.5 3
V
A
24 30
m
36 45
30 38 m
30 S
0.76 1
V
3.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
516 pF
82 pF
43 pF
4.6
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
8.9 13 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=20V, ID=7A
4.3 7 nC
2.4 nC
Qgd Gate Drain Charge
1.4 nC
tD(on)
Turn-On DelayTime
6.4 ns
tr Turn-On Rise Time
VGS=10V, VDS=20V, RL=2.8, 3.6 ns
tD(off)
Turn-Off DelayTime
RGEN=3
16.2 ns
tf Turn-Off Fall Time
6.6 ns
trr Body Diode Reverse Recovery Time IF=7A, dI/dt=100A/µs
18 ns
Qrr Body Diode Reverse Recovery Charge IF=7A, dI/dt=100A/µs
10 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
2/5
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Part Number AO4450
Description 40V N-Channel MOSFET
Maker Freescale
Total Page 5 Pages
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