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AO4454 Datasheet

100V N-Channel MOSFET

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AO4454 pdf
AO4454
100V N-Channel MOSFET
General Description
The AO4454 is fabricated with SDMOS TM trench technology that combines excellent RDS(ON) with low gate
charge.The result is outstanding efficiency with controlled switching behaviar. This universal technology is well
suited for PWM, load switching and general purpose applications.
Features
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 7V)
100V
6.5A
< 36m
< 43m
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
ID
IDM
IAS, IAR
EAS, EAR
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
100
±25
6.5
5.3
46
28
39
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
31
59
16
Max
40
75
24
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
1/6
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Freescale Semiconductor Electronic Components Datasheet

AO4454 Datasheet

100V N-Channel MOSFET

No Preview Available !

AO4454 pdf
AO4454
100V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
100
V
IDSS Zero Gate Voltage Drain Current
VDS=100V, VGS=0V
TJ=55°C
10
µA
50
IGSS Gate-Body leakage current
VDS=0V, VGS= ±25V
100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
2.8 3.4
4
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
46
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=6.5A
TJ=125°C
30 36
m
56 67
VGS=7V, ID=6A
35.5 43 m
gFS Forward Transconductance
VDS=5V, ID=6.5A
20 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
0.68 1
V
IS Maximum Body-Diode Continuous Current
4A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=50V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
950 1180 1450
77 110 145
21 36 50
0.35 0.7 1.05
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
15 19 23 nC
Qgs Gate Source Charge
VGS=10V, VDS=50V, ID=6.5A
5.5 7 8.5 nC
Qgd Gate Drain Charge
3.5 6.3 9 nC
tD(on)
Turn-On DelayTime
10 ns
tr Turn-On Rise Time
VGS=10V, VDS=50V, RL=6.7, 7.2 ns
tD(off)
Turn-Off DelayTime
RGEN=3
15 ns
tf Turn-Off Fall Time
7 ns
trr Body Diode Reverse Recovery Time IF=6.5A, dI/dt=500A/µs
11 16 21 ns
Qrr Body Diode Reverse Recovery Charge IF=6.5A, dI/dt=500A/µs
35 50 65 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2/6
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Part Number AO4454
Description 100V N-Channel MOSFET
Maker Freescale
Total Page 6 Pages
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