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Freescale Semiconductor Electronic Components Datasheet

AOB240L Datasheet

40V N-Channel MOSFET

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AOB240L pdf
AOT240L/AOB240L/AOTF240L
40V N-Channel MOSFET
General Description
The AOT240L & AOB240L & AOTF240L uses Trench MOSFET technology that is uniquely optimized to provide
the most efficient high frequency switching performance. Power losses are minimized due to an extremely low
combination of RDS(ON) and Crss.
Features
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
40V
105A/85A
< 2.9m(< 2.6m)
< 3.7m(< 3.5m)
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOT240L/AOB240L
AOTF240L
Drain-Source Voltage
VDS
40
Gate-Source Voltage
VGS
±20
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
105
82
400
85
60
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS
EAS
20
16
68
231
TC=25°C
Power Dissipation B TC=100°C
PD
176
88
41
20
TA=25°C
Power Dissipation A TA=70°C
PDSM
1.9
1.2
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
AOT240L/AOB240L
15
65
0.85
AOTF240L
15
65
3.6
* Surface mount package TO263
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
1/7
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Freescale Semiconductor Electronic Components Datasheet

AOB240L Datasheet

40V N-Channel MOSFET

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AOB240L pdf
AOT240L/AOB240L/AOTF240L
40V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
RDS(ON) Static Drain-Source On-Resistance
ID=250µA, VGS=0V
VDS=40V, VGS=0V
VDS=0V, VGS=±20V
VDS=VGSID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
TO220/TO220F
VGS=4.5V, ID=20A
TO220/TO220F
VGS=10V, ID=20A
TO263
VGS=4.5V, ID=20A
TO263
TJ=55°C
TJ=125°C
40
1
400
1.7
2.4
3.7
3
2.1
2.7
1
5
±100
2.2
2.9
4.7
V
µA
nA
V
A
m
3.7 m
2.6 m
3.5 m
gFS Forward Transconductance
VDS=5V, ID=20A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current G
78
0.65
1
105
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
3510
1070
68
0.5 1
1.5
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
49 72 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=20V, ID=20A
22 32 nC
9 nC
Qgd Gate Drain Charge
7 nC
tD(on)
Turn-On DelayTime
11 ns
tr Turn-On Rise Time
VGS=10V, VDS=20V, RL=1,
10 ns
tD(off)
Turn-Off DelayTime
RGEN=3
38 ns
tf Turn-Off Fall Time
11 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
21 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
58 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
2/7
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Part Number AOB240L
Description 40V N-Channel MOSFET
Maker Freescale
Total Page 7 Pages
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