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AOD4128 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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AOD4128 pdf
AOD4128
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOD4128 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.
This device is ideally suited for use as a low side switch in CPU core power conversion. The device can also be used
in PWM, load switching and general purpose applications.
Features
VDS (V) = 25V
ID = 60 A
(VGS = 10V)
RDS(ON) < 4 m(VGS = 10V)
RDS(ON) < 7 m(VGS = 4.5V)
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
CurrentG
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.3mH C
ID
IDM
IAR
EAR
Power Dissipation B
TC=25°C
TC=100°C
PD
Power Dissipation A
TA=25°C
TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
25
±20
60
47
165
45
304
75
37
2.0
1.3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
t 10s
Steady State
Steady State
Symbol
RθJA
RθJC
Typ
18
50
1
Max
25
60
2
Units
V
V
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
1/6
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Freescale Semiconductor Electronic Components Datasheet

AOD4128 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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AOD4128 pdf
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250uA, VGS=0V
25
V
IDSS Zero Gate Voltage Drain Current
VDS=25V, VGS=0V
TJ=55°C
1
uA
5
IGSS Gate-Body leakage current
VDS=0V, VGS=±20V
100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250µA
1.3 1.6 2.5
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
165
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
3.4 4
m
5.0 6
VGS=4.5V, ID=20A
5.8 7 m
gFS Forward Transconductance
VDS=5V, ID=20A
55 S
VSD Diode Forward Voltage
IS=1A, VGS=0V
IS Maximum Body-Diode Continuous CurrentG
0.7 1
60
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=12.5V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
3578
731
438
2.5
4300
950
615
4
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=12.5V, ID=20A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=12.5V,
RL=0.63, RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
61.8 80
29.8 39
8.5
12.9
11.6
17.7
45
20
39 48
32
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Re1: Sep. 2008
2/6
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Part Number AOD4128
Description N-Channel Enhancement Mode Field Effect Transistor
Maker Freescale
Total Page 6 Pages
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