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Freescale Semiconductor Electronic Components Datasheet

AOD4130 Datasheet

60V N-Channel MOSFET

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AOD4130 pdf
AOD4130/AOI4130
60V N-Channel MOSFET
General Description
The AOD4130/AOI4130 combines advanced trench MOSFET technology with a low resistance package to
provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED backlighting.
Features
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
60V
30A
< 24m
< 30m
D
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
60
±20
30
20
74
6.5
5
27
36.5
52
25
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
12.4
34
2.4
Max
20
50
2.9
G
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
1/6
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Freescale Semiconductor Electronic Components Datasheet

AOD4130 Datasheet

60V N-Channel MOSFET

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AOD4130 pdf
AOD4130/AOI4130
60V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
60
V
IDSS Zero Gate Voltage Drain Current
VDS=60V, VGS=0V
TJ=55°C
1
µA
5
IGSS Gate-Body leakage current
VDS=0V, VGS= ±20V
100 nA
VGS(th) Gate Threshold Voltage
VDS=5V, ID=250µA
1.6 2.2 2.8
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
74
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
19.5
37.5
24
45
m
VGS=4.5V, ID=20A
24 30 m
gFS Forward Transconductance
VDS=5V, ID=20A
55 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current G
0.76 1
46
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1265
70
40
1.8
1582
100
67
3.6
1900
130
95
5.4
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
23 28.3 34 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=30V, ID=20A
11 13.4 16
3.6 4.5 5.4
nC
nC
Qgd Gate Drain Charge
4.3 7.2 10 nC
tD(on)
Turn-On DelayTime
7.5 ns
tr Turn-On Rise Time
VGS=10V, VDS=30V, RL=1.5, 6.5 ns
tD(off)
Turn-Off DelayTime
RGEN=3
33 ns
tf Turn-Off Fall Time
7.5 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
15 22 30 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
53 76 100 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
2/6
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Part Number AOD4130
Description 60V N-Channel MOSFET
Maker Freescale
Total Page 6 Pages
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