http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




Freescale Semiconductor Electronic Components Datasheet

AOD417 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

AOD417 pdf
AOD417
P-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOD417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low
gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for
high current load applications.
Features
VDS (V) = -30V
ID = -25A
(VGS = -10V)
RDS(ON) < 34m(VGS = -10V)
RDS(ON) < 55m(VGS = -4.5V)
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TA=25°C G
Current B,G
TA=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.3mH C
VGS
ID
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
-30
±20
-25
-20
-60
-14
30
50
25
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case D
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
16.7
40
2.5
Max
25
50
3
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
1/6
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/


Freescale Semiconductor Electronic Components Datasheet

AOD417 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

AOD417 pdf
AOD417
P-Channel Enhancement Mode Field
Effect Transistor
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V
VDS=-24V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±20V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-20A
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS=-4.5V, ID=-7A
VDS=-5V, ID=-20A
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
-30
-1
-60
-1
-5
±100
-1.9 -3
27
36
40
18
-0.75
34
55
-1
-6
V
µA
nA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
920
140
90
69
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
VGS=-10V, VDS=-15V, ID=-20A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=0.75,
RGEN=0.75
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=-20A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs
16.2
8.2
2.9
3.6
8
30
22
26
23
14
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
TA =25°C. The Power dissipation P DSM is based on R θJA (<10s) and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 175°C may be u sed if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev1: Sep. 2008
2/6
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/


Part Number AOD417
Description P-Channel Enhancement Mode Field Effect Transistor
Maker Freescale
Total Page 6 Pages
PDF Download
AOD417 pdf
Download PDF File
AOD417 pdf
View for Mobile



Buy Electronic Components




Related Datasheet

1 AOD410 N-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
AOD410 pdf
2 AOD410 N-Channel 30-V (D-S) MOSFET Freescale
Freescale
AOD410 pdf
3 AOD4100 N-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
AOD4100 pdf
4 AOD4102 30V N-Channel MOSFET Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
AOD4102 pdf
5 AOD4104 N-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
AOD4104 pdf
6 AOD4106 N-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
AOD4106 pdf
7 AOD410L N-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
AOD410L pdf
8 AOD4110 N-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
AOD4110 pdf
9 AOD4112 N-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductors
Alpha & Omega Semiconductors
AOD4112 pdf








Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components