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AOD4182 Datasheet

80V N-Channel MOSFET

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AOD4182 pdf
AOD4182
80V N-Channel MOSFET
General Description
The AOD4182 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate
charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal
technology is well suited for PWM, load switching and general purpose applications.
Features
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=7V)
80V
53A
< 15.5m
< 20m
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
80
±25
53
38
85
8.5
6.8
45
101
100
50
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
16
40
1
Max
20
50
1.5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
1/7
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Freescale Semiconductor Electronic Components Datasheet

AOD4182 Datasheet

80V N-Channel MOSFET

No Preview Available !

AOD4182 pdf
AOD4182
80V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=80V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS= ±25V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
VGS=7V, ID=20A
Forward Transconductance
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous CurrentG
TJ=55°C
TJ=125°C
80
2.8
85
10
50
100
3.3 4.2
12.5
22.5
16
33
0.7
15.5
28
20
1
54
V
µA
nA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=40V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1335
150
40
0.35
1670
215
72
0.75
2005
280
100
1.2
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
22 28 34 nC
Qgs Gate Source Charge
VGS=10V, VDS=40V, ID=20A
8.8 11 13 nC
Qgd Gate Drain Charge
5 8 11 nC
tD(on)
Turn-On DelayTime
12 ns
tr Turn-On Rise Time
VGS=10V, VDS=40V, RL=2,
9 ns
tD(off)
Turn-Off DelayTime
RGEN=3
20 ns
tf Turn-Off Fall Time
8 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
14.5 21 27.5 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
45.5 65 85 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
2/7
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Part Number AOD4182
Description 80V N-Channel MOSFET
Maker Freescale
Total Page 7 Pages
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