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AOD4189 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

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AOD4189 pdf
AOD4189
P-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOD4189 uses advanced trench technology and design to provide excellent RDS(ON) with low gate
charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high
current load applications.
Features
VDS (V) = -40V
ID = -40A
RDS(ON) < 22m
RDS(ON) < 29m
(VGS = -10V)
(VGS = -10V)
(VGS = -4.5V)
D
G
S
Absolute Maximum Ratings TC=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current B,H
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
ID
IDM
IAR
EAR
Power Dissipation B
TC=25°C
TC=100°C
PD
Power Dissipation A
TA=25°C
TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
-40
±20
-40
-28
-50
-35
61
62.5
31
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Junction-to-Ambient A,G
Maximum Junction-to-Case D,F
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
15
41
2
Max
20
50
2.4
Units
V
V
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
1/6
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Freescale Semiconductor Electronic Components Datasheet

AOD4189 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

AOD4189 pdf
AOD4189
P-Channel Enhancement Mode Field
Effect Transistor
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V
VDS=-40V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-12A
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS=-4.5V, ID=-8A
VDS=-5V, ID=-12A
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
-40
-1.7
-50
-1
-5
±100
-1.9 -3
18
27
23
35
-0.74
22
33
29
-1
-20
V
µA
nA
V
A
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1870
185
155
2.5 4.5 6.5
pF
pF
pF
SWITCHING PARAMETERS
Qg (-10V) Total Gate Charge
Qg (-4.5V) Total Gate Charge
VGS=-10V, VDS=-20V,
Qgs Gate Source Charge
ID=-12A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=-10V, VDS=-20V, RL=1.6,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=-12A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs
31.4 41
7.9 10
7.6
6.2
10
18
38
24
32 42
30
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are
based on TJ(MAX)=150°C, using steady state junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using t 300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device TmBouDnted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
TBD
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
H. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep 1 ST 2008).
Rev1: Oct 2008
2/6
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Part Number AOD4189
Description P-Channel Enhancement Mode Field Effect Transistor
Maker Freescale
Total Page 6 Pages
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