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Freescale Semiconductor Electronic Components Datasheet

AOD474 Datasheet

75V N-Channel MOSFET

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AOD474 pdf
AOD474
75V N-Channel MOSFET
General Description
The AOD474 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
Features
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
75V
10A
< 130m
< 155m
D
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS
EAS
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
G
S
Maximum
75
±20
10
7
18
2.5
2
10
5
28.5
14.5
2.1
1.3
-55 to 175
Typ Max
17 25
50 60
4.3 5.2
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
1/6
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Freescale Semiconductor Electronic Components Datasheet

AOD474 Datasheet

75V N-Channel MOSFET

No Preview Available !

AOD474 pdf
AOD474
75V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=10mA, VGS=0V
VDS=75V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGSID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=5A
VGS=4.5V, ID=2A
Forward Transconductance
VDS=5V, ID=5A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
75
1.2
18
1.8
105
190
120
10
0.75
1
5
±100
2.4
130
235
155
1
10
V
µA
nA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=37.5V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
280
30
13
1.1 2.2 3.3
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
6 9 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=37.5V, ID=5A
3 5 nC
1.2 nC
Qgd Gate Drain Charge
1.5 nC
tD(on)
Turn-On DelayTime
5 ns
tr Turn-On Rise Time
VGS=10V, VDS=37.5V, RL=7.5,
3.5
ns
tD(off)
Turn-Off DelayTime
RGEN=3
16 ns
tf Turn-Off Fall Time
3.5 ns
trr Body Diode Reverse Recovery Time IF=5A, dI/dt=500A/µs
14 ns
Qrr Body Diode Reverse Recovery Charge IF=5A, dI/dt=500A/µs
52 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
2/6
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Part Number AOD474
Description 75V N-Channel MOSFET
Maker Freescale
Total Page 6 Pages
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