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Freescale Semiconductor Electronic Components Datasheet

MD7P19130HR3 Datasheet

RF Power Field Effect Transistors

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MD7P19130HR3 pdf
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1930 to
1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for PCN - PCS/cellular radio and WLL
applications.
TIMDyoQpdi=ceal1l12S,5i60n4gmlDeAP-,CCPaHorurwite=irth4W05-0WC%DatCMtslAipApPvigen.rg,f,oFCrumhllaaFnnrcneeeq:luVBeDanDncdy=wB2iad8nthVdo,=l3t3sG.,8P4PMTHeszt,
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 20 dB
Drain Efficiency — 30%
Device Output Signal PAR — 6 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 36 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 130 Watts CW
Output Power
Pout @ 1 dB Compression Point w 130 Watts CW
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MD7P19130H
Rev. 0, 5/2008
www.DataSheet4U.com
MD7P19130HR3
MD7P19130HSR3
1930 - 1990 MHz, 40 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465M - 01, STYLE 1
NI - 780 - 4
MD7P19130HR3
CASE 465H - 02, STYLE 1
NI - 780S - 4
MD7P19130HSR3
RFinA/VGSA 3
2 RFoutA/VDSA
RFinB/VGSB 4
1 RFoutB/VDSB
(Top View)
Table 1. Maximum Ratings
Figure 1. Pin Connections
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +65
Gate - Source Voltage
VGS - 6.0, +10
Operating Voltage
VDD
32, +0
Storage Temperature Range
Tstg - 65 to +150
Case Operating Temperature
TC 150
Operating Junction Temperature (1,2)
TJ 225
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
Vdc
Vdc
Vdc
°C
°C
°C
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MD7P19130HR3 MD7P19130HSR3
1


Freescale Semiconductor Electronic Components Datasheet

MD7P19130HR3 Datasheet

RF Power Field Effect Transistors

No Preview Available !

MD7P19130HR3 pdf
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (w1,2w) w.DataSheUent4itU.com
Thermal Resistance, Junction to Case
Case Temperature 80°C, 130 W CW
Case Temperature 75°C, 40 W CW
RθJC
0.31
0.36
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics (3)
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
10 μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
1 μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
1 μAdc
On Characteristics (3)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 316 μAdc)
VGS(th)
1.2
2
2.7 Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1250 mAdc, Measured in Functional Test)
VGS(Q)
1.9
2.7
3.4 Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 3.16 Adc)
VDS(on)
0.1
0.2
0.3 Vdc
Dynamic Characteristics (3,4)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 1.2 — pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss — 586 —
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss — 348 — pF
Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1250 mA, Pout = 40 W Avg., f = 1932.5 MHz and f =
1987.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps 18.5 20 21.5 dB
Drain Efficiency
ηD 27 30 — %
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
PAR 5.6 6 — dB
Adjacent Channel Power Ratio
ACPR
- 36
- 32.5
dBc
Input Return Loss
IRL — - 16 - 7 dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
3. Measurement made with device in single - ended configuration.
4. Part internally matched both on input and output.
(continued)
MD7P19130HR3 MD7P19130HSR3
2
RF Device Data
Freescale Semiconductor


Part Number MD7P19130HR3
Description RF Power Field Effect Transistors
Maker Freescale Semiconductor
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