http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




Freescale Semiconductor Electronic Components Datasheet

MRFE6S9205HSR3 Datasheet

RF Power Field Effect Transistors

No Preview Available !

MRFE6S9205HSR3 pdf
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
6T144yp0Di0cPamCl ASH,inwPgoilteuht-5=C0a5%r8riWCerlaiptWptsin-ACgv,DgCM.,hAFaunPlnleeFrlfroBerqamunaednnwcciedy:tBhVa=DnD3d.=,8342G8MPVHPozlTt,seI,nsItpDuMQto=Sdiegln1a,l
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 21.2 dB
Drain Efficiency — 34%
Device Output Signal PAR — 6.3 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 39.1 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, Pout = 260 W CW
(3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
Optimized for Doherty Applications
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRFE6S9205H
Rev. 0, 10/2007
MRFE6S9205HR3
MRFE6S9205HSR3
880 MHz, 58 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRFE6S9205HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRFE6S9205HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TC
TJ
- 0.5, +66
- 0.5, +12
- 65 to +150
150
225
Vdc
Vdc
°C
°C
°C
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 202 W CW
Case Temperature 77°C, 58 W CW
RθJC
0.27
0.33
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access the MTTF calculators
by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6S9205HR3 MRFE6S9205HSR3
1


Freescale Semiconductor Electronic Components Datasheet

MRFE6S9205HSR3 Datasheet

RF Power Field Effect Transistors

No Preview Available !

MRFE6S9205HSR3 pdf
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
Class 1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
Class B (Minimum)
Charge Device Model (per JESD22 - C101)
Class IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IDSS
10 μAdc
IDSS
1 μAdc
IGSS
10 μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 600 μAdc)
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 4.2 Adc)
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
VGS(th)
1.4
2.1
2.9 Vdc
VGS(Q)
2.2
2.9
3.7 Vdc
VDS(on)
0.1
0.2
0.3 Vdc
Crss — 1.63 —
Coss — 590 —
Ciss — 491 —
pF
pF
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 58 W Avg. W - CDMA, f = 880 MHz,
Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps 20 21.2 23 dB
Drain Efficiency
ηD 32 34 — %
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
PAR 6 6.3 — dB
Adjacent Channel Power Ratio
ACPR
- 39.1
- 37.5
dBc
Input Return Loss
IRL
- 12.5
- 8.5
dB
1. Part is internally matched on input.
(continued)
MRFE6S9205HR3 MRFE6S9205HSR3
2
RF Device Data
Freescale Semiconductor


Part Number MRFE6S9205HSR3
Description RF Power Field Effect Transistors
Maker Freescale Semiconductor
Total Page 12 Pages
PDF Download
MRFE6S9205HSR3 pdf
MRFE6S9205HSR3 Datasheet PDF
[partsNo] view html
View PDF for Mobile








Similar Datasheet

1 MRFE6S9205HSR3 RF Power Field Effect Transistors Freescale Semiconductor
Freescale Semiconductor
MRFE6S9205HSR3 pdf





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components

Privacy Policy