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MW5IC2030GNBR1 Datasheet

RF LDMOS Wideband Integrated Power Amplifiers

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MW5IC2030GNBR1 pdf
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Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW5IC2030N wideband integrated circuit is designed with on - chip
matching that makes it usable from 1930 to 1990 MHz. This multi - stage
structure is rated for 26 to 28 Volt operation and covers all typical cellular base
station modulation formats.
Final Application
Typical CDMA Performance: VDD = 27 Volts, IDQ1 = 160 mA,
(IDPQilo2 t=,
S2y3n0cm, PAa,gPinougt,
= 5 Watts Avg.,
Traffic Codes 8
Full Frequency Band, IS - 95 CDMA
Through 13), Channel Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 23 dB
Drain Efficiency — 20%
ACPR @ 885 kHz Offset — - 49 dBc in 30 kHz Channel Bandwidth
Driver Application
S2T4yyp0niccm,aAPl C,aPgDionMugtA,=TP1reaWrfffoiacrtmtCAaovndgce.es,:F8VuTDllhDFr=oreu2qg7uheV1no3cl)tys, ,BCIahDnaQdn1,n=IeSl2-B290a5nmCdAwD,iMdIDtAhQ=2(P=ilot,
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 24 dB
ACPR @ 885 kHz Offset — - 63 dBc in 30 kHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 27 Vdc, 1990 MHz, 30 Watts CW
Output Power
Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 0 to 43 dBm CW
Pout.
On - Chip Matching (50 Ohm Input, >4 Ohm Output)
Integrated Temperature Compensation Capability with Enable/Disable
Function
On - Chip Current Mirror gm Reference FET for Self Biasing Application (1)
Integrated ESD Protection
200°C Capable Plastic Package
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
Document Number: MW5IC2030N
Rev. 7, 1/2006
MW5IC2030NBR1
MW5IC2030GNBR1
1930 - 1990 MHz, 30 W, 26 V
GSM/GSM EDGE, W - CDMA, PHS
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW5IC2030NBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW5IC2030GNBR1
VDS1
VRD2
VRG2
RFin
VRD1
VRG1/VGS1
VGS2
Quiescent Current
Temperature Compensation
Figure 1. Functional Block Diagram
VDS2/RFout
GND
VDS1
VRD2
VRG2
GND
RFin
VRD1
VRG1/VGS1
VGS2
NC
GND
1
2
3
4
5
6
7
8
9
10
11
16 GND
15 NC
14
VDS2/
RFout
13 NC
12 GND
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 2. Pin Connections
1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MW5IC2030NBR1 MW5IC2030GNBR1
1


Freescale Semiconductor Electronic Components Datasheet

MW5IC2030GNBR1 Datasheet

RF LDMOS Wideband Integrated Power Amplifiers

No Preview Available !

MW5IC2030GNBR1 pdf
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Operating Junction Temperature
Input Power
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
Tstg
TJ
Pin
Symbol
RθJC
Value
- 0.5, +65
- 0.5, +15
- 65 to +175
200
20
Value (1,2)
Unit
Vdc
Vdc
°C
°C
dBm
Unit
°C/W
CDMA Application
(Pout = 5 W CW)
Stage 1, 27 Vdc, IDQ = 160 mA
Stage 2, 27 Vdc, IDQ = 230 mA
4.89
1.75
PHS Application
(Pout = 12.6 W CW)
Stage 1, 26 Vdc, IDQ = 300 mA
Stage 2, 26 Vdc, IDQ = 1300 mA
Table 3. ESD Protection Characteristics
4.85
1.61
Test Conditions
Class
Human Body Model
1B (Minimum)
Machine Model
A (Minimum)
Charge Device Model
3 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
3 260 °C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
CDMA Functional Tests (In Freescale 1900 MHz Test Fixture, 50 οhm system) VDD = 27 Vdc, IDQ1 = 160 mA, IDQ2 = 230 mA, Pout =
5 W Avg., 1960 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth
@ ± 885 kHz Offset. PAR = 9.8 dB @ 0.01 Probability on CCDF.
Power Gain
Gps 21.5 23 — dB
Drain Efficiency
ηD 18 20 — %
Input Return Loss
IRL — - 18 - 10 dB
Adjacent Channel Power Ratio
ACPR
- 49 - 47 dBc
Gain Flatness in 30 MHz BW, 1930 - 1990 MHz
GF — 0.2 0.3 dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
(continued)
MW5IC2030NBR1 MW5IC2030GNBR1
2
RF Device Data
Freescale Semiconductor


Part Number MW5IC2030GNBR1
Description RF LDMOS Wideband Integrated Power Amplifiers
Maker Freescale Semiconductor
Total Page 16 Pages
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